SDP20S30 Infineon Technologies, SDP20S30 Datasheet

SCHOTTKY 300V 10A TO220-3-1

SDP20S30

Manufacturer Part Number
SDP20S30
Description
SCHOTTKY 300V 10A TO220-3-1
Manufacturer
Infineon Technologies
Datasheet

Specifications of SDP20S30

Package / Case
TO-220-3 (Straight Leads)
Voltage - Forward (vf) (max) @ If
1.7V @ 10A
Current - Reverse Leakage @ Vr
200µA @ 300V
Current - Average Rectified (io) (per Diode)
10A (DC)
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
0ns
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Schottky Diodes
Peak Reverse Voltage
300 V
Forward Continuous Current
10 A
Max Surge Current
36 A
Configuration
Dual Common Cathode
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
200 uA
Maximum Power Dissipation
65 W
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDP20S30IN
SDP20S30X
SDP20S30XK
SDP20S30XTIN
SDP20S30XTIN
SP000013625

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SDP20S30
Manufacturer:
VISHAY
Quantity:
10 000
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
• No forward recovery
Type
SDP20S30
Maximum Ratings, at T
Parameter
Continuous forward current,
RMS forward current,
Surge non repetitive forward current, sine halfwave
T
Repetitive peak forward current
T
Non repetitive peak forward current
t
i
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation, single diode mode,
Operating and storage temperature
Rev. 1.5
p
C
j
2
=10µs, T
=150°C, T
material - Silicon Carbide
the switching behavior
t value,
=25°C, t
C
p
C
=25°C
T
=10ms
C
=100°C, D=0.1
=25°C, t
Package
P-TO220-3
p
=10ms
f=50Hz
j
= 25 °C, unless otherwise specified (per leg)
T
C
=100°C
Ordering Code
Q67040-S4419
T
C
=25°C
Page 1
1
Symbol
I
I
I
I
I
V
V
P
T
F
FRMS
FSM
FRM
FMAX
i
2
j ,
RRM
RSM
tot
dt
2
T
Marking
D20S30
thinQ!
stg
3
Product Summary
V
Q
I
SiC Schottky Diode
F
-55... +175
RRM
c
Value
100
300
300
6.5
10
14
36
45
65
P-TO220
SDP20S30
2x10
2009-11-25
300
23
Unit
A
A²s
V
W
°C
V
nC
A

Related parts for SDP20S30

SDP20S30 Summary of contents

Page 1

... Symbol I =100° =25° Page 1 thinQ! SiC Schottky Diode Product Summary V RRM P-TO220 Marking D20S30 Value FRMS 36 FSM 45 FRM 100 FMAX 6 300 RRM 300 RSM 65 tot T -55... +175 j , stg SDP20S30 V 300 23 nC 2x10 A Unit A A² °C 2009-11-25 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Symbol R thJC = 25 °C, unless otherwise specified (per leg) j Symbol Page 2 SDP20S30 Values Unit min. typ. max 2.3 K/W Values Unit min. typ. ...

Page 3

... Switching time =200V, I =10A =-200A/µ Total capacitance =0V, T =25°C, f =1MHz =150V, T =25°C, f =1MHz =300V, T =25°C, f =1MHz Rev. 1 °C, unless otherwise specified (per leg) j Symbol Q c =150° =150° Page 3 SDP20S30 Values Unit min. typ. max n. 600 - - 2009-11-25 ...

Page 4

... Rev. 1.5 2 Diode forward current (per leg parameter °C 180 Typ. forward power dissipation vs. average forward current (per leg) P F(AV -40°C 25°C 12 100°C 125°C 150°C 1.6 1 Page 4 SDP20S30 ) C ≤ 175 ° 100 120 140 =100° ...

Page 5

... Transient thermal impedance (per leg) Z thJC parameter : K 150°C 125°C 100°C 25° 200 V 300 Typ. C stored energy (per leg) E =f(V C µ Page SDP20S30 single pulse - 2.5 1 100 150 200 SDP20S30 D = 0.50 0.20 0.10 0.05 0.02 0. 300 V R 2009-11-25 ...

Page 6

... Typ. capacitive charge vs. current slope (per leg parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 1 A/µs 1000 di /dt F Page 6 SDP20S30 2009-11-25 ...

Page 7

... P-TO220-3-1, P-TO220-3-21 Rev. 1.5 Page 7 SDP20S30 2009-11-25 ...

Page 8

... Rev. 1.5 Page 8 SDP20S30 2009-11-25 ...

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