BLF4G20LS-130 NXP Semiconductors, BLF4G20LS-130 Datasheet
BLF4G20LS-130
Specifications of BLF4G20LS-130
Related parts for BLF4G20LS-130
BLF4G20LS-130 Summary of contents
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... BLF4G20LS-130 UHF power LDMOS transistor Rev. 01 — 1 June 2007 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance 900 mA; unless otherwise specified class-AB production test circuit. ...
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... RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2. Pin [1] Connected to flange 3. Ordering information Table 3. Type number BLF4G20LS-130 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... I = 900 mA Symbol IMD3 IMD5 IMD7 7.1 Ruggedness in class-AB operation The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA BLF4G20LS-130_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions drain-source breakdown ...
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... One-tone CW Fig 1. One-tone CW power gain and drain efficiency as functions of load power; BLF4G20LS-130_1 Product data sheet (dB 900 mA 1990 MHz case typical values Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor 001aag526 (%) 120 160 P (W) L © NXP B.V. 2007. All rights reserved ...
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... P ( case Fig 3. Intermodulation distortion as a function of 0 IMD3 (dBc) 20 (1) (2) 40 (3) ( Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor 900 mA case f = 1990 MHz. average load power; typical values 001aag529 80 100 P (W) L(AV) © NXP B.V. 2007. All rights reserved. ...
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... Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as 001aag532 ACPR (dBc) EVM M EVM rms 60 80 100 P ( case Fig 8. GSM EDGE ACPR and rms EVM as functions of Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor 50 60 ACPR 400 70 ACPR 600 900 mA ...
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... Product data sheet Figure 9) Value 0 220 5.1 Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor C10 VDD BLF4G20LS-130 output - PCS rev 3.5); thickness = 0.76 mm. r Dimensions Remarks [1] [1] [1] 1812X7R105KL2AB 0603 5 mm © NXP B.V. 2007. All rights reserved. C6 001aag534 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 9.65 20.45 0.067 0.815 0.390 0.010 0.057 ...
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... Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Root Mean Square Voltage Standing Wave Ratio Release date Data sheet status 20070601 Product data sheet Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 1 June 2007 BLF4G20LS-130 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF4G20LS-130_1 All rights reserved. Date of release: 1 June 2007 ...