PMBFJ309 T/R NXP Semiconductors, PMBFJ309 T/R Datasheet - Page 12

• Manufacturer Part Number: PMBFJ309 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBFJ309,215

Philips Semiconductors
10. Revision history
Table 9:
9397 750 13403
Product data sheet
Document ID
PMBFJ308_309_310_3
Modifications:
PMBFJ308_309_310_2
Revision history
Release date
20040723
19960911
•
•
The format of this data sheet has been redesigned to comply with the new presentation
and information standard of Philips Semiconductors.
Table 4
“Marking”: added new marking codes.
PMBFJ308; PMBFJ309; PMBFJ310
Data sheet status
Product data sheet
Product specification -
Rev. 03 — 23 July 2004
Change
notice
-
N-channel silicon field-effect transistors
Order number
9397 750 13403
9397 750 01141
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Supersedes
PMBFJ308_309_310_2
-
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