DIODE SCHOTTKY 60V 10A TO-220AB

STPS20L60CT

Manufacturer Part NumberSTPS20L60CT
DescriptionDIODE SCHOTTKY 60V 10A TO-220AB
ManufacturerSTMicroelectronics
STPS20L60CT datasheet
 


Specifications of STPS20L60CT

Voltage - Forward (vf) (max) @ If600mV @ 10ACurrent - Reverse Leakage @ Vr350µA @ 60V
Current - Average Rectified (io) (per Diode)10AVoltage - Dc Reverse (vr) (max)60V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Diode Configuration1 Pair Common CathodeMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ProductSchottky Rectifiers
Peak Reverse Voltage60 VForward Continuous Current20 A
Max Surge Current220 AConfigurationDual Common Cathode
Forward Voltage Drop0.74 VMaximum Reverse Leakage Current350 uA
Operating Temperature Range+ 150 CMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS CompliantReverse Recovery Time (trr)-
Other names497-7553-5
STPS20L60CT
  
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MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
(max)
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP
NEGLIGIBLE SWITCHING LOSSES
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
2
Packaged in TO-220AB, I
PAK and D
device is intended for
use in high frequency
inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward current
F(AV)
I
Surge non repetitive forward current
FSM
I
Repetitive peak reverse current
RRM
P
Repetitive peak avalanche power
ARM
T
Storage temperature range
stg
Tj
Maximum operating junction temperature *
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
* :
dTj
Rth j
(
a
)
July 2003 - Ed: 3C
STPS20L60CT/CG/CR
POWER SCHOTTKY RECTIFIER
2 x 10 A
60 V
150 °C
0.56 V
TO-220AB
STPS20L60CT
2
PAK, this
Parameter
Tc = 140°C
= 0.5
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
A1
K
A2
K
A2
K
A1
A1
2
D
PAK
STPS20L60CG
A2
K
A1
2
I
PAK
STPS20L60CR
Value
60
30
10
Per diode
20
Per device
220
1
5800
- 65 to + 175
150
10000
A2
Unit
V
A
A
A
A
W
C
C
V/µs
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STPS20L60CT Summary of contents

  • Page 1

    ... Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink * : dTj Rth July 2003 - Ed: 3C STPS20L60CT/CG/CR POWER SCHOTTKY RECTIFIER 150 °C 0.56 V TO-220AB STPS20L60CT 2 PAK, this Parameter Tc = 140° Sinusoidal µs square F = 1kHz tp = 1µ 25° ...

  • Page 2

    ... STPS20L60CT/CG/CR THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

  • Page 3

    ... Tc=75°C = 0.1 0.2 Tc=100°C Single pulse 0.0 1E-1 1E+0 1E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 2.0 1.0 0.5 0.2 0.1 1 STPS20L60CT/CG/ (25°C) T (° 100 tp(s) 1E-3 1E-2 1E-1 VR(V) 10 125 150 T tp ...

  • Page 4

    ... STPS20L60CT Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150°C (typical values) Tj=25°C 10.0 Tj=125°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 PACKAGE MECHANICAL DATA ...

  • Page 5

    ... FOOTPRINT 16.90 10.30 8.90 REF 5.08 1.30 3.70 STPS20L60CT/CG/CR DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1 ...

  • Page 6

    ... COOLING METHOD: C RECOMMENDED TORQUE VALUE: 0.55 M.N MAXIMUM TORQUE VALUE: 0.70 M.N Ordering type Marking STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CG STPS20L60CG STPS20L60CG-TR STPS20L60CG STPS20L60CR STPS20L60CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use ...