STTH2003CFP STMicroelectronics, STTH2003CFP Datasheet - Page 3

• Manufacturer Part Number: STTH2003CFP
• Description: DIODE FAST DL 300V 10A TO220FPAB
• Manufacturer: STMicroelectronics

Specifications of STTH2003CFP

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 10 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 110 A
• Reverse Current Ir: 20 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Capacitance, Junction: 12 pF
• Current, Forward: 20 A
• Current, Surge: 110 A
• Package Type: TO-220FPAB
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 4 °C/W
• Speed, Switching: Fast Recovery
• Temperature, Junction, Maximum: +175 °C
• Time, Recovery: 35 ns
• Voltage, Forward: 1 V
• Voltage, Reverse: 300 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4407-5

STTH2003
Table 5.
Figure 1.
Figure 3.
Symbol
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
S factor Softness factor
8
6
4
2
0
1E-3
0
V
P1(W)
I
RM
t
t
Z
FP
rr
fr
th(j-c)
Single pulse
TO-220AB, D 2 PAK, I 2 PAK
/R
Reverse recovery time
Forward recovery time
Peak forward voltage
Reverse recovery current
2
th(j-c)
Recovery characteristics
Conduction losses versus average
forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
δ = 0.05
Parameter
1E-2
4
δ = 0.1
I
F(AV)
t (s)
p
6
δ = 0.2
(A)
1E-1
8
T
T
T
T
j
j
j
j
δ = 0.5
= 25 °C
= 25 °C
= 25 °C
= 125 °C
δ
=tp/T
10
Doc ID 5377 Rev 9
Test conditions
δ = 1
T
tp
I
I
I
dI
I
dI
V
I
dI
I
dI
1E+0
F
R
F
F
F
F
FR
F
F
F
F
12
= 0.5 A, I
= 1 A, V
= 10 A
= 10 A,
= 10 A, V
= 1 A
/dt = -50 A/µs
/dt = 100 A/µs
/dt = 100 A/µs
/dt = 200 A/µs
= 1.1 x V
Figure 2.
Figure 4.
200
100
1.0
0.8
0.6
0.4
0.2
0.0
10
1E-2
1
0.50
Z
R
I
th(j-c)
FM
Single pulse
rr
CC
= 30 V
= 0.25 A
Fmax
(A)
0.75
= 200 V
/R
th(j-c)
1.00
Forward voltage drop versus
forward current (maximum values,
per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-22FP0AB)
T =125°C
j
1.25
1E-1
Min.
1.50
T =75°C
j
V
t (s)
p
1.75
FM
Typ.
0.3
(V)
T =25°C
j
2.00
1E+0
2.25
Characteristics
Max.
230
3.5
25
35
8
2.50
2.75
Unit
ns
ns
V
A
-
3/11
1E+1
3.00