BAV199,215 NXP Semiconductors, BAV199,215 Datasheet

DIODE SW DBL 75V 160MA SOT23

BAV199,215

Manufacturer Part Number
BAV199,215
Description
DIODE SW DBL 75V 160MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV199,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 75V
Current - Average Rectified (io) (per Diode)
160mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.16 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1619-2
934032640215
BAV199 T/R
Product data sheet
Supersedes data of 1999 May 11
book, halfpage
DATA SHEET
BAV199
Low-leakage double diode
DISCRETE SEMICONDUCTORS
M3D088
2001 Oct 12

Related parts for BAV199,215

BAV199,215 Summary of contents

Page 1

DATA SHEET book, halfpage BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 DISCRETE SEMICONDUCTORS M3D088 2001 Oct 12 ...

Page 2

... NXP Semiconductors Low-leakage double diode FEATURES • Plastic SMD package • Low leakage current: typ • Switching time: typ. 0.8 µs • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATION • Low-leakage current applications in surface mounted circuits ...

Page 3

... NXP Semiconductors Low-leakage double diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient ...

Page 4

... NXP Semiconductors Low-leakage double diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 single diode loaded 100 double diode loaded 0 0 100 Device mounted on a FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ...

Page 5

... NXP Semiconductors Low-leakage double diode 2 10 handbook, halfpage I R (nA 100 (1) Maximum values. (2) Typical values. Fig.5 Reverse current as a function of junction temperature; per diode. handbook, full pagewidth D.U. Ω Fig.7 Reverse recovery time test circuit and waveforms. 2001 Oct 12 MLB754 handbook, halfpage ...

Page 6

... NXP Semiconductors Low-leakage double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2001 Oct scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords