PMEG2005CT,215 NXP Semiconductors, PMEG2005CT,215 Datasheet - Page 9

• Manufacturer Part Number: PMEG2005CT,215
• Description: SCHOTTKY RECT 20V 500MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMEG2005CT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Voltage - Forward (vf) (max) @ If: 390mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io) (per Diode): 500mA
• Diode Configuration: 1 Pair Common Cathode
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 10 A
• Configuration: Single Dual Anode
• Recovery Time: 22 ns
• Forward Voltage Drop: 360 mV
• Maximum Reverse Leakage Current: 30 uA
• Maximum Power Dissipation: 330 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061751215

NXP Semiconductors
9. Package outline
10. Packing information
PMEG2005CT
Product data sheet
8.1 Quality information
I
The current ratings for the typical waveforms as shown in
calculated according to the equations:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PMEG2005CT SOT23
RMS
Fig 14. Duty cycle definition
Fig 15. Package outline SOT23 (TO-236AB)
For further information and the availability of packing methods, see
=
I
F AV
(
Packing methods
)
at DC, and
All information provided in this document is subject to legal disclaimers.
2.5
2.1
Dimensions in mm
Rev. 2 — 22 June 2010
1.4
1.2
I
Description
4 mm pitch, 8 mm tape and reel
RMS
1
P
=
500 mA low V
I
M
×
t
1
3.0
2.8
1.9
I
δ
F AV
(
t
2
3
with I
)
duty cycle δ =
=
F
RMS
I
M
dual MEGA Schottky barrier rectifier
2
006aaa812
×
0.48
0.38
defined as RMS current.
δ
0.45
0.15
t
t
t
1
2
with I
Figure
Section
PMEG2005CT
M
1.1
0.9
0.15
0.09
[1]
defined as peak current,
04-11-04
14.
9, 10,
Packing quantity
3000
-215
© NXP B.V. 2010. All rights reserved.
11
and
12
10000
-235
are
9 of 14