BAT854AW,115 NXP Semiconductors, BAT854AW,115 Datasheet

DIODE SCHTK DUAL 40V 200MASOT323

BAT854AW,115

Manufacturer Part Number
BAT854AW,115
Description
DIODE SCHTK DUAL 40V 200MASOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT854AW,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
550mV @ 100mA
Current - Reverse Leakage @ Vr
500nA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Dual Common Anode
Forward Voltage Drop
0.55 V @ 0.1 A
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056165115
BAT854AW T/R
BAT854AW T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAT854W series
Schottky barrier (double) diodes
Product data sheet
2001 Feb 27

Related parts for BAT854AW,115

BAT854AW,115 Summary of contents

Page 1

DATA SHEET k, halfpage BAT854W series Schottky barrier (double) diodes Product data sheet DISCRETE SEMICONDUCTORS M3D102 2001 Feb 27 ...

Page 2

... NXP Semiconductors Schottky barrier (double) diodes FEATURES • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • ...

Page 3

... NXP Semiconductors Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current t = 8.3 ms half sinewave; ...

Page 4

... NXP Semiconductors Schottky barrier (double) diodes GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) (3) 1 − 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.6 Forward current as a function of forward voltage; typical values. 20 handbook, halfpage C d (pF ° MHz; T amb Fig ...

Page 5

... NXP Semiconductors Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2001 Feb scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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