STPS10120CFP STMicroelectronics, STPS10120CFP Datasheet - Page 3

• Manufacturer Part Number: STPS10120CFP
• Description: DIODE SCHOTTKY 120V 10A TO-220FP
• Manufacturer: STMicroelectronics

Specifications of STPS10120CFP

• Voltage - Forward (vf) (max) @ If: 850mV @ 5A
• Current - Reverse Leakage @ Vr: 6µA @ 120V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 120V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220AB Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS10120C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
1.E-03
0
1
0.01
0.0
P
P
I (A)
M
P
F(AV)
ARM
I
M
ARM p
0.5
(1µs)
(W)
(t )
δ
=0.5
t
1.0
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB)
1.5
1.E-02
δ = 0.05
2.0
1
2.5
I
F(AV)
δ = 0.1
t (µs)
p
t(s)
3.0
(A)
δ = 0.2
3.5
10
1.E-01
4.0
δ = 0.5
4.5
δ
=tp/T
100
5.0
T =125°C
T
T =25°C
T =75°C
c
δ = 1
c
c
5.5
1.E+00
tp
6.0
1000
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
6
6
5
5
4
4
3
3
2
2
1
1
0
70
60
50
40
30
20
10
1
0
1.E-03
0
0
25
I
F(AV)
I (A)
P
M
δ
ARM
P
=tp/T
I
M
ARM p
(A)
(25°C)
25
T
(t )
δ
=0.5
t
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
50
tp
δ
= 0.5, per diode)
50
R
1.E-02
th(j-a)
=30° C/W
75
T
75
amb
T (°C)
j
t(s)
(°C)
100
R
TO-220FPAB
th(j-a)
100
1.E-01
=R
th(j-c)
125
TO-220AB
Characteristics
125
150
T =125°C
T =25°C
T =75°C
c
c
c
1.E+00
175
150
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