STPS10H100CG-TR STMicroelectronics, STPS10H100CG-TR Datasheet - Page 3

• Manufacturer Part Number: STPS10H100CG-TR
• Description: DIODE SCHOTTKY 100V 5A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS10H100CG-TR

• Voltage - Forward (vf) (max) @ If: 730mV @ 5A
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7541-2; STPS10H100CG-TR

Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
0.001
Fig. 5-1:
current versus overload duration (maximum
values, per diode)
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
120
100
1.0
0.8
0.6
0.4
0.2
0.0
0.01
80
60
40
20
1E-3
0.1
1E-3
0
0.01
1
Zth(j-c)/Rth(j-c)
P
IM(A)
= 0.1
= 0.5
= 0.2
P
ARM
I
M
Single pulse
ARM p
(1µs)
(t )
=0.5
t
0.1
Non repetitive surge peak forward
1E-2
1E-2
1
t (µs)
p
t(s)
tp(s)
10
1E-1
1E-1
100
=tp/T
T
Tc=125°C
Tc=50°C
Tc=75°C
tp
1E+0
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)(TO-220FPAB)
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (per
diode).(TO-220FPAB)
80
70
60
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
1E-3
0
1
0
1E-3
0
P
IM(A)
Zth(j-c)/Rth(j-c)
P
ARM
I
M
ARM p
= 0.5
= 0.2
= 0.1
Single pulse
(25°C)
(t )
=0.5
t
25
1E-2
1E-2
STPS10H100CT/CG/CR/CFP
50
T (°C)
tp(s)
1E-1
j
t(s)
75
1E-1
100
1E+0
=tp/T
125
Tc=125°C
T
Tc=75°C
Tc=50°C
tp
1E+0
1E+1
150
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