STPS10L40CG-TR STMicroelectronics, STPS10L40CG-TR Datasheet - Page 3

• Manufacturer Part Number: STPS10L40CG-TR
• Description: DIODE SCHOTTKY 40V 5A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS10L40CG-TR

• Voltage - Forward (vf) (max) @ If: 530mV @ 5A
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS10L40C
Figure 1.
Figure 3.
Figure 5.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0
0.0
0.1
1E-3
1
0.01
P
I (A)
F(AV)
P
M
P
0.5
ARM
ARM p
I
M
(W)
(1µs)
1.0
(t )
δ
=0.5
t
δ = 0.05
0.1
Average forward power
dissipation versus average
forward current (per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB and D
1.5
2.0
1E-2
δ = 0.1
2.5
1
I
F(AV)
3.0
t (µs)
p
δ = 0.2
t(s)
3.5
(A)
10
4.0
2
PAK).
1E-1
δ = 0.5
4.5
5.0
δ
100
=tp/T
5.5
δ = 1
T
T =125°C
T =25°C
T =75°C
C
6.0
C
C
tp
1000
1E+0
6.5
Figure 2.
Figure 4.
Figure 6.
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
1E-3
1.2
0.8
0.6
0.4
0.2
0
I
F(AV)
1
0
I (A)
M
25
P
δ
ARM
P
I
(A)
=tp/T
M
ARM p
(25°C)
25
(t )
T
δ
=0.5
t
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
50
δ
tp
= 0.5, per diode)
1E-2
50
75
T
amb
T (°C)
75
j
t(s)
(°C)
100
1E-1
100
R
th(j-a)
R
Characteristics
th(j-a)
=15°C/W
=R
th(j-c)
125
125
T =125°C
T =25°C
T =75°C
C
C
C
150
1E+0
150
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