STPS2060CT STMicroelectronics, STPS2060CT Datasheet - Page 3

• Manufacturer Part Number: STPS2060CT
• Description: DIODE SCHOTTKY 60V 2X10A TO220AB
• Manufacturer: STMicroelectronics

Specifications of STPS2060CT

• Voltage - Forward (vf) (max) @ If: 800mV @ 10A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS2060C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
9
8
7
6
5
4
3
2
1
0
180
160
140
120
100
0.1
80
60
40
20
0
1.E-03
0
P
1
0.01
F(AV)
P
I (A)
M
P
ARM
I
ARM p
M
1
(W)
(1µs)
(t )
δ
2
=0.5
t
Conduction losses versus average
current (per diode)
Normalized avalanche power
derating versus pulse duration
0.1
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
δ = 0.05
3
1.E-02
4
δ = 0.1
1
5
I
t (µs)
F(AV)
p
t(s)
6
δ = 0.2
(A)
7
10
1.E-01
8
δ = 0.5
9
δ
100
=tp/T
10
δ = 1
T =110°C
T =50°C
T =75°C
T
C
C
C
11
1.E+00
tp
1000
12
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
11
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
9
8
7
6
5
4
3
2
1
0
1.E-03
1
0
0
I
25
F(AV)
Z
P
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
th(j-c)
ARM
P
δ
ARM p
=tp/T
(A)
(25°C)
/R
(t )
25
th(j-c)
T
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
impedance junction to case versus
pulse duration
Relative variation of thermal
50
tp
R
th(j-a)
=15°C/W
1.E-02
50
75
T
R
th(j-a)
amb
t (s)
T (°C)
p
=R
75
j
th(j-c)
(°C)
100
1.E-01
100
Characteristics
δ
=tp/T
125
125
T
tp
1.E+00
150
150
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