STPS20L60CG-TR STMicroelectronics, STPS20L60CG-TR Datasheet - Page 2

• Manufacturer Part Number: STPS20L60CG-TR
• Description: DIODE SCHOTTKY 60V 10A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20L60CG-TR

• Voltage - Forward (vf) (max) @ If: 600mV @ 10A
• Current - Reverse Leakage @ Vr: 350µA @ 60V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.42x I
STPS20L60CT/CG/CR
THERMAL RESISTANCE
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
8
7
6
5
4
3
2
1
0
2/6
When the diodes 1 and 2 are used simultaneously :
Symbol
Symbol
0
PF(av)(W)
R
Tj(diode 1) = P(diode1) x R
R
V
th (j-c)
I
th (c)
R
F
1
*
*
2
F(AV)
Junction to case
= 0.05
Reverse leakage current
Forward voltage drop
3
+ 0.014 I
4
Parameter
5
= 0.1
IF(av) (A)
F
6
2
(RMS)
7
= 0.2
th(j-c)
8
(Per diode) + P(diode 2) x R
TO-220AB / I
TO-220AB / I
9
= 0.5
Parameter
=tp/T
10
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
T
11
= 1
Tests conditions
tp
12
2
2
PAK / D
PAK / D
Fig.
temperature ( =0.5) (per diode).
12
10
8
6
4
2
0
V
I
I
I
I
IF(av)(A)
0
F
F
F
F
R
2
2
= 10 A
= 10 A
= 20 A
= 20 A
PAK
PAK
= V
=tp/T
2:
th(c)
RRM
25
T
Average
tp
Per diode
Coupling
Total
50
Min.
Rth(j-a)=15°C/W
Tamb(°C)
current
Rth(j-a)=Rth(j-c)
75
Typ.
0.48
0.62
65
Value
0.85
1.6
0.1
100
versus
Max.
0.56
0.74
350
0.6
0.7
95
125
ambient
°C/W
Unit
Unit
C/W
mA
µA
V
150