STTH1506TPI STMicroelectronics, STTH1506TPI Datasheet
STTH1506TPI
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STTH1506TPI
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STTH1506TPI Summary of contents
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... A DESCRIPTION and flexible The TURBOSWITCH “H” ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI /dt. F Parameter sinusoidal STTH1506TPI TOP3I (insulated) Value Unit 600 26 130 -65 +150 ...
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... STTH1506TPI THERMAL AND POWER DATA Symbol Parameter R Junction to case th (j- (c) R Junction to case th (j-c) P Conduction power dissipation for 1 both diodes STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter I * Reverse leakage cur- R rent V ** Forward voltage drop F Pulse test 5ms, < 380µs, < 2% ...
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... Fig. 6: Reverse recovery charges versus dI F (90% confidence). Qrr(nC) 350 V =400V R T =125°C j 300 250 200 150 100 F(AV 800 1000 0 STTH1506TPI T =125°C T =125° (Maximum values) (Maximum values) T =125°C j (Typical values) T =25°C (Maximum values) VFM( ...
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... STTH1506TPI Fig. 7: Softness factor versus dI values). S factor 0. F(AV) V =400V R T =125°C j 0.70 0.60 0.50 0.40 0.30 dIF/dt(A/µs) 0.20 0 200 400 600 Fig. 9: Transient peak forward voltage versus dI /dt (90% confidence). F VFP( F(AV) T =125° dIF/dt(A/µ 100 150 200 250 300 Fig ...
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... Spain - Sweden - Switzerland - United Kingdom - United States. REF Package Weight TOP3I 4.46 g. STMicroelectronics GROUP OF COMPANIES http://www.st.com STTH1506TPI DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.4 4.6 0.173 1.45 1.55 0.057 14.35 15.60 0.565 0.5 0.7 0.020 2.7 2.9 0.106 15.8 16.5 0.622 20.4 21 ...