1PS181,115 NXP Semiconductors, 1PS181,115 Datasheet - Page 4

DIODE 80V 215MA HI-SPEED SC-59

1PS181,115

Manufacturer Part Number
1PS181,115
Description
DIODE 80V 215MA HI-SPEED SC-59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1PS181,115

Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.2 V @ 0.1 A
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1PS181 T/R
1PS181 T/R
934028440115
NXP Semiconductors
GRAPHICAL DATA
1996 Sep 03
High-speed double diode
handbook, halfpage
Fig.2
Device mounted on an FR4 printed-circuit board.
(1) V
(2) V
(3) V
(mA)
I F
(μA)
10
10
R
R
R
300
200
100
I R
10
Fig.4
10
= 80 V; maximum values.
= 80 V; typical values.
= 25 V; typical values.
0
1
2
1
Maximum permissible continuous forward
current as a function of ambient temperature.
2
0
0
Reverse current as a function of
junction temperature.
(1)
(2)
100
100
single diode loaded
double diode loaded
(3)
T
amb
T j (
o
C)
( C)
o
MBG380
MBD033
200
200
4
handbook, halfpage
handbook, halfpage
(1) T
(2) T
(3) T
f = 1 MHz; T
Fig.5
(pF)
C d
(mA)
j
j
j
300
200
100
2.5
2.0
1.5
1.0
0.5
I F
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
Fig.3
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
0
j
= 25 °C.
Forward current as a function of
forward voltage.
5
10
(1)
1
(2)
15
V F (V)
(3)
Product data sheet
20
1PS181
V R (V)
MBG382
MBH191
25
2

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