STTA2512P STMicroelectronics, STTA2512P Datasheet

DIODE TURBO 25A 1200V SOD-93

STTA2512P

Manufacturer Part Number
STTA2512P
Description
DIODE TURBO 25A 1200V SOD-93
Manufacturer
STMicroelectronics
Series
TURBOSWITCH™r
Datasheet

Specifications of STTA2512P

Voltage - Forward (vf) (max) @ If
2.1V @ 25A
Current - Reverse Leakage @ Vr
150µA @ 480V
Current - Average Rectified (io) (per Diode)
25A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
110ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Through Hole, Radial
Package / Case
SOD-93-2
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
2.1 V
Recovery Time
110 ns
Forward Continuous Current
50 A
Max Surge Current
210 A
Reverse Current Ir
150 uA
Power Dissipation
62.5 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTA2512P
Manufacturer:
SEAGATE
Quantity:
1 000
Part Number:
STTA2512P
Manufacturer:
ST
0
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
CURRENT OPERATION.
Electrical insulation : 2500V
Capacitance : < 45pF.
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
HIGH FREQUENCY AND/OR HIGH PULSED
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOP
Symbol
I
V
F(RMS)
I
I
T
FRM
FSM
RRM
T
stg
j
V
TURBOSWITCH
t
F
rr
V
I
F(AV)
(max)
®
RRM
(typ)
Repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
RMS
1200V
60ns
1.9V
25A
TM
ULTRA-FAST HIGH VOLTAGE DIODE
Parameter
tp = 5 s F = 5kHz square
tp = 10ms sinusoidal
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
STTA5012TV1
K2
K1
ISOTOP
A2
A1
STTA5012TV1/2
TM
STTA2512P
- 65 to + 150
K
STTA5012TV2
Value
1200
300
210
150
50
STTA2512P
A2
K2
SOD93
K1
A1
K
Unit
°C
°C
V
A
A
A
1/9
A

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STTA2512P Summary of contents

Page 1

... They are particularly suitable in Motor Control circuitries the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Parameter 5kHz square tp = 10ms sinusoidal STTA2512P STTA5012TV1 STTA5012TV2 SOD93 STTA2512P Value Unit 1200 50 300 210 - 150 °C 150 ° 1/9 ...

Page 2

... STTA2512P / STTA5012TV1/2 THERMAL AND POWER DATA (per diode) Symbol R Junction to case thermal th(j-c) resistance R Coupling thermal resistance th(c) P Conduction power dissipation 25A =0.5 F(AV) P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter V * Forward voltage drop Reverse leakage current ...

Page 3

... Fig. 5: Reverse recovery time versus dI F confidence, per diode). trr(ns) 500 IF=IF(av) 450 400 350 300 250 IF=0.5*IF(av) 200 150 100 400 500 STTA2512P / STTA5012TV1/2 VFM(V) 0.5 1.0 1.5 2.0 2.5 3.0 tp(s) Single pulse 1E-3 1E-2 1E-1 IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 100 200 300 400 3 ...

Page 4

... STTA2512P / STTA5012TV1/2 Fig. 6: Softness factor (tb/ta) versus dI values, per diode). S factor 1.60 Tj=125°C 1.40 1.20 1.00 dIF/dt(A/µs) 0.80 0 100 200 300 Fig. 8: Transient peak forward voltage versus dI /dt (90% confidence, per diode). F VFP(V) 60 IF=IF(av dIF/dt(A/µ 100 200 300 4/9 /dt (typical Fig ...

Page 5

... Fig "FREEWHEEL" MODE. SWITCHING TRANSISTOR 1/T series has been TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE SWITCHING LOSSES LOSSES in the diode in the diode DIODE: TURBOSWITCH T = tp/T STTA2512P / STTA5012TV1/2 Watts SWITCHING LOSSES in the tansistor due to the diode IL LOAD 5/9 ...

Page 6

... STTA2512P / STTA5012TV1/2 Fig SNUBBER DIODE. PWM 1/T = tp/T Fig RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS 6/9 Fig DEMAGNETIZING DIODE. Conduction losses : Max values at 125°C,suitable for Ipeak < 3.IF(av) Reverse losses : F(AV (RMS ...

Page 7

... S = tb/ta Fig. G: TURN-ON CHARACTERISTICS / 1. tfr Turn-on losses : (in the transistor, due to the diode DIODE Turn-off losses (in the diode RECTIFIER Turn-off losses : OPERATION (with non negligible serial inductance P3,P3’ and P5 are suitable for power MOSFET and IGBT I Fmax Turn-on losses : 0 STTA2512P / STTA5012TV1 ...

Page 8

... STTA2512P / STTA5012TV1/2 PACKAGE MECHANICAL DATA ISOTOP 8/9 DIMENSIONS REF. Millimeters Inches Min. Max. Min. A 11.80 12.20 0.465 A1 8.90 9.10 0.350 B 7.8 8.20 0.307 C 0.75 0.85 0.030 C2 1.95 2.05 0.077 D 37.80 38.20 1.488 D1 31.50 31.70 1.240 E 25.15 25.50 0.990 E1 23.85 24.15 0.939 E2 24 ...

Page 9

... Package Weight ISOTOP 27g. without screws ISOTOP SOD93 3.79g. STMicroelectronics GROUP OF COMPANIES http://www.st.com STTA2512P / STTA5012TV1/2 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 4.90 0.185 1.17 1.37 0.046 2.50 0.098 1.27 0.050 0.50 0.78 0.020 1.10 1.30 0.043 1 ...

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