BAL74,215 NXP Semiconductors, BAL74,215 Datasheet - Page 4

• Manufacturer Part Number: BAL74,215
• Description: DIODE HI SPEED SW 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAL74,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3424-2; 934002810215; BAL74 T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Dec 17
handbook, full pagewidth
High-speed diode
Fig.2
Device mounted on an FR4 printed-circuit board.
Based on square wave currents; T
I FSM
(A)
(mA)
10
10
I
F
10
250
200
150
100
−1
1
2
50
0
1
Maximum permissible continuous forward
current as a function of ambient temperature.
0
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
50
j
100
= 25 °C prior to surge.
10
150
T
amb
msa562
(°C)
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
j
j
j
300
200
100
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
I F
0
Forward current as a function of forward
voltage.
0
10
3
(1)
1
(2)
t p (µs)
V F (V)
(3)
Product data sheet
MBG704
MBG382
BAL74
10
4
2