1PS76SB10,115 NXP Semiconductors, 1PS76SB10,115 Datasheet

DIODE SCHOTTKY 30V 200MA SC-76

1PS76SB10,115

Manufacturer Part Number
1PS76SB10,115
Description
DIODE SCHOTTKY 30V 200MA SC-76
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1PS76SB10,115

Package / Case
SC-76, SOD-323, UMD2
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1PS76SB10 T/R
568-3406-2
934045390115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1PS76SB10,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1996 Oct 14
DATA SHEET
1PS76SB10
Schottky barrier diode
DISCRETE SEMICONDUCTORS
2004 Jan 26

Related parts for 1PS76SB10,115

1PS76SB10,115 Summary of contents

Page 1

DATA SHEET 1PS76SB10 Schottky barrier diode Product data sheet Supersedes data of 1996 Oct 14 DISCRETE SEMICONDUCTORS 2004 Jan 26 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Low forward voltage • Guard ring protected • Very small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package ...

Page 3

... NXP Semiconductors Schottky barrier diode CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d Note = 300 μs; δ = 0.02. 1. Pulsed test THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Refer to SOD323 standard mounting conditions. ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (1) (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz. T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Plastic surface-mounted package; 2 leads 1 (1) DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.40 0.25 mm 0.05 0.8 0.25 0.10 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 2004 Jan scale 1.8 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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