PMEG2020EJ,115 NXP Semiconductors, PMEG2020EJ,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG2020EJ,115
• Description: SCHOTTKY RECT 20V 2A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG2020EJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 525mV @ 2A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 60pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 2 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.525 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4119-2; 934058256115; PMEG2020EJ T/R; PMEG2020EJ T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PMEG2020EH_EJ_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
[3]
[4]
Symbol Parameter
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
R
tot
th(j-a)
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
reverse voltage
forward current
repetitive peak forward current t
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Limiting values
Thermal characteristics
PMEG2020EH
PMEG2020EJ
PMEG2020EH
PMEG2020EJ
PMEG2020EH
PMEG2020EJ
R
R
are a significant part of the total power losses. Nomograms for determining the reverse
and I
F(AV)
Rev. 04 — 15 January 2010
rating will be available on request.
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
Conditions
in free air
Conditions
T
t
wave
T
p
p
sp
amb
≤ 1 ms; δ ≤ 0.5
= 8 ms; square
≤ 55 °C
≤ 25 °C
F
MEGA Schottky barrier rectifiers
[1][2]
[1][3]
[1][2]
[1][3]
[1]
[2]
[1]
[2]
[4]
Min
-
-
-
-
-
-
-
-
-
−65
−65
-
-
Min
-
-
-
-
Typ
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
20
2
7
9
375
830
360
830
150
+150
+150
Max
330
150
350
150
60
55
Unit
V
A
A
A
mW
mW
mW
mW
°C
°C
°C
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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