1N5821RL STMicroelectronics, 1N5821RL Datasheet

DIODE SCHOTTKY 30V 3A DO-201AD

1N5821RL

Manufacturer Part Number
1N5821RL
Description
DIODE SCHOTTKY 30V 3A DO-201AD
Manufacturer
STMicroelectronics
Datasheet

Specifications of 1N5821RL

Voltage - Forward (vf) (max) @ If
500mV @ 3A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
2mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Schottky Rectifiers
Peak Reverse Voltage
30 V
Forward Continuous Current
3 A
Max Surge Current
80 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
2000 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
3A
Forward Voltage Vf Max
500mV
Forward Surge Current Ifsm Max
80A
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5821RLST
497-5572-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5821RL
Manufacturer:
ST
0
Part Number:
1N5821RLG
Manufacturer:
ON
Quantity:
1 626
Part Number:
1N5821RLG
Manufacturer:
VISHAY/威世
Quantity:
20 000
MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
n
n
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency
protection and small battery chargers.
* :
ABSOLUTE RATINGS (limiting values)
July 2003 - Ed: 3A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
F(AV)
T
dPtot
FSM
RRM
ARM
Tj
dTj
stg
V
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward
current
Repetitive peak avalanche
power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
T
inverters,
j
Rth j
(
1
a
)
free
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
wheeling,
Parameter
0.475 V
150°C
40 V
3 A
polarity
T
T
tp = 10 ms
Sinusoidal
tp = 1µs Tj = 25°C
L
L
= 100 C
= 110 C
= 0.5
= 0.5
1N5820 1N5821 1N5822
20
3
- 65 to + 150
DO-201AD
10000
Value
1700
150
30
10
80
3
1N582x
40
3
V/µs
Unit
°C
°C
W
V
A
A
A
A
1/5

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1N5821RL Summary of contents

Page 1

LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I F(AV) V RRM (max) F FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE ...

Page 2

THERMAL RESISTANCES Symbol R Junction to ambient th (j-a) R Junction to lead th (j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 ...

Page 3

Fig. 5-1: Average forward current versus ambient temperature ( =0.5) (1N5820/1N5821). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l)=25°C/W 3.0 2.5 2.0 Rth(j-a)=80°C/W 1.5 1.0 T 0.5 Tamb(°C) tp =tp/T 0 Fig. 6-1: Non repetitive surge peak forward current versus overload ...

Page 4

Fig. 9-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821). IR(mA) 1E+2 1N5820 Tj=125°C 1E+1 1E+0 Tj=100°C 1E-1 Tj=25°C 1E-2 VR(V) 1E Fig. 10-1: Forward voltage drop versus forward current (typical values) (1N5820/1N5821). ...

Page 5

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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