STPS3L60S STMicroelectronics, STPS3L60S Datasheet - Page 2

• Manufacturer Part Number: STPS3L60S
• Description: DIODE SCHOTTKY 60V 3A SMC
• Manufacturer: STMicroelectronics

Specifications of STPS3L60S

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 55µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Current, Forward: 3 A
• Current, Reverse: 1 A
• Current, Surge: 75 A
• Package Type: DO-214AB (SMC)
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.94 V
• Voltage, Reverse: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2454-2

STPS3L60S
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.54 x I
Fig. 1: Average forward power dissipation versus
average forward current.
2.5
2.0
1.5
1.0
0.5
0.0
2/5
Symbol
Symbol
PF(av)(W)
0.0
R
V
I
th(j-l)
R
F
*
*
0.5
F(AV)
Junction to leads
Reverse leakage current
Forward voltage drop
1.0
= 0.05
+ 0.037 I
1.5
Parameter
IF(av) (A)
= 0.1
2.0
F
2
(RMS)
= 0.2
2.5
= 0.5
3.0
Parameter
=tp/T
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
3.5
= 1
T
tp
Tests conditions
4.0
Fig. 2: Average forward current versus ambient
temperature( = 0.5).
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
I
I
I
F
F
F
F
0
R
IF(av)(A)
= 3 A
= 3 A
= 6 A
= 6 A
= V
=tp/T
RRM
25
T
tp
50
Min.
Tamb(°C)
Rth(j-a)=Rth(j-l)
Rth(j-a)=75°C/W
75
Typ.
0.56
0.67
10
Value
20
100
Max.
0.65
0.94
0.76
0.7
55
15
125
Unit
Unit
C/W
mA
µA
V
150