STTH1502FP STMicroelectronics, STTH1502FP Datasheet - Page 4

• Manufacturer Part Number: STTH1502FP
• Description: DIODE UFAST 200V 15A TO-220FPAC
• Manufacturer: STMicroelectronics

Specifications of STTH1502FP

• Voltage - Forward (vf) (max) @ If: 1.1V @ 15A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-5275-5

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1.0
0.1
0.0
16
14
12
10
200
150
100
1.E-03
8
6
4
2
0
50
0
0
0
TO-220FPAC
V
Single pulse
V
I
R
F
I
R
=160V
F
=15A
=160V
=15A
50
50
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
100
100
1.E-02
F
/dt (typical values)
150
150
200
200
F
/dt (typical values)
1.E-01
250
250
T
j
=125°C
300
300
T
T
j
j
=25°C
=125°C
T
j
=25°C
350
1.E+00
350
400
400
dI
dI
tp(s)
F
F
/dt(A/µs)
/dt(A/µs)
450
450
1.E+01
500
500
Figure 6.
Figure 8.
Figure 10. Dynamic parameters versus
100
80
70
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
10
25
1
V
I
R
F
=160V
=15A
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
junction temperature
50
I
RM
10
Q
RR
75
100
T
T
j
=125°C
j
=25°C
100
100
V
125
osc
dI
F=1MHz
T
V
=30mV
F
j
I
=25°C
V
R
F
/dt(A/µs)
=160V
=15A
R
T
STTH1502
(V)
j
(°C)
RMS
1000
1000
150
F
/dt