SDT12S60 Infineon Technologies, SDT12S60 Datasheet - Page 5

• Manufacturer Part Number: SDT12S60
• Description: SCHOTTKY 600V 12A TO220-2-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT12S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 12A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 12A (DC)
• Current - Reverse Leakage @ Vr: 400µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 450pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 12 A
• Max Surge Current: 36 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 400 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 12.0 A
• Qc (typ): 30.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT12S60IN; SDT12S60X; SDT12S60XK; SDT12S60XTIN; SDT12S60XTIN; SP000013825

5 Typ. reverse current vs. reverse voltage
7 Typ. capacitance vs. reverse voltage
parameter: T
Rev. 2.3
I
C = f ( V
R
= f ( V
µA
pF
10
10
10
10
10
10
600
500
450
400
350
300
250
200
150
100
50
-1
-2
-3
100 150 200 250 300 350 400 450 500
0
2
1
0
10
R
R
150°C
125°C
100°C
25°C
)
)
0
C
= 25 °C, f = 1 MHz
10
1
10
2
V
V
V
V
R
R
600
10
Page 5
3
6 Transient thermal impedance
Z
parameter : D = t
8 Typ. C stored energy
E
thJC
C
K/W
= f ( V
µJ
10
10
10
10
10
10
= f ( t
-1
-2
-3
-4
9
7
6
5
4
3
2
1
0
1
0
10
0
R
SDT12S60
)
-7
p
10
)
single pulse
100
-6
10
p
200
/ T
-5
10
-4
300
10
-3
400
SDT12S60
SDT12S60
10
2008-06-03
-2
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
t
V
s
p
R
600
10
0