BAS516,115 NXP Semiconductors, BAS516,115 Datasheet - Page 2

• Manufacturer Part Number: BAS516,115
• Description: DIODE SW 75V 250MA HS SOD523
• Manufacturer: NXP Semiconductors

Specifications of BAS516,115

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 85V
• Avg. Forward Curr (max): 0.25
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: SOD-523
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1603-2; 934055217115; BAS516 T/R

NXP Semiconductors
FEATURES
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Aug 31
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
High-speed diode
s
is the temperature at the soldering point of the cathode tab.
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
T
square wave; T
surge; see Fig.4
T
s
s
t = 1 μs
t = 1 ms
t = 1 s
= 90 °C; note 1; see Fig.2
= 90 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Marking code: 6.
j
Fig.1 Simplified outline (SOD523) and symbol.
= 25 °C prior to
PIN
1
2
1
Top view
cathode
anode
2
−
−
−
−
−
−
−
−
−65
−
MIN.
DESCRIPTION
85
75
250
500
4
1
0.5
500
+150
150
Product data sheet
MAX.
MAM408
BAS516
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT