BAT54L,315 NXP Semiconductors, BAT54L,315 Datasheet

DIODE SCHOTTKY 30V 200MA SOD882

BAT54L,315

Manufacturer Part Number
BAT54L,315
Description
DIODE SCHOTTKY 30V 200MA SOD882
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT54L,315

Package / Case
SOD-882
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
2µA @ 25V
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057248315::BAT54L T/R::BAT54L T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BAT54L
Schottky barrier diode
Product data sheet
2003 Jun 23

Related parts for BAT54L,315

BAT54L,315 Summary of contents

Page 1

DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet DISCRETE SEMICONDUCTORS 2003 Jun 23 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Low forward voltage • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Boardspace 1. (approx. 10% of SOT23) • Power dissipation comparable to SOT23. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I continuous reverse current R C diode capacitance d Note = 300 μs; δ = 0.02. 1. Pulse test THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 μ ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (1) (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Leadless ultra small plastic package; 2 terminals; body 1.0 x 0 (2) DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.55 0.62 mm 0.03 0.46 0.47 0.55 Notes 1. Including plating thickness 2. The marking bar indicates the cathode ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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