PMEG4010BEA,115 NXP Semiconductors, PMEG4010BEA,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG4010BEA,115
• Description: SCHOTTKY RECT 40V 1A SOD323
• Manufacturer: NXP Semiconductors

Specifications of PMEG4010BEA,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Voltage - Forward (vf) (max) @ If: 640mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Capacitance @ Vr, F: 50pF @ 1V, 1MHz
• Current - Average Rectified (io): 1A (DC)
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.64 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057918115::PMEG4010BEA T/R::PMEG4010BEA T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jun 14
PMEGXX10BEA (SOD323)
R
R
PMEGXX10BEV (SOT666)
R
R
V
I
C
SYMBOL
amb
R
F
1 A very low V
barrier rectifier
th(j-a)
th(j-s)
th(j-a)
th(j-s)
d
P
rating will be available on request.
SYMBOL
= 25 °C unless otherwise specified.
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
forward voltage
continuous
reverse current
diode capacitance
PARAMETER
p
≤ 300 μs; δ ≤ 0.02.
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
F
MEGA Schottky
PARAMETER
I
I
I
I
I
I
V
V
V
V
V
F
F
F
F
F
F
R
R
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 000 mA
CONDITIONS
= 10 V; note 1
= 20 V; note 1
= 30 V; note 1
= 40 V; note 1
= 1 V; f = 1 MHz
PMEG2010BEA/
90
150
210
280
355
420
15
40
−
−
66
PMEG2010BEV
TYP.
4
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
130
190
240
330
390
500
40
200
−
−
80
MAX.
CONDITIONS
PMEG3010BEA/
90
150
215
285
380
450
12
−
40
−
55
PMEG3010BEV
TYP.
130
200
250
340
430
560
30
−
150
−
70
MAX.
PMEGXX10BEA;
PMEGXX10BEV
PMEG4010BEA/
95
155
220
295
420
540
7
−
−
30
43
PMEG4010BEV UNIT
TYP.
VALUE
Product data sheet
450
210
405
215
90
80
130
210
270
350
470
640
20
−
−
100
50
MAX.
R
and I
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
mV
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
F(AV)