BAT960,115 NXP Semiconductors, BAT960,115 Datasheet

DIODE SCHOTTKY 23V 1A SOT666

BAT960,115

Manufacturer Part Number
BAT960,115
Description
DIODE SCHOTTKY 23V 1A SOT666
Manufacturer
NXP Semiconductors
Datasheet
1.BAT960115.pdf (7 pages)

Specifications of BAT960,115

Package / Case
SS Mini-6 (SOT-666)
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
23V
Current - Average Rectified (io)
1A (DC)
Current - Reverse Leakage @ Vr
50µA @ 15V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
25pF @ 5V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
23 V
Forward Continuous Current
1 A
Max Surge Current
8 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056715115
BAT960 T/R
BAT960 T/R
Product data sheet
Supersedes data of 2002 Jun 24
DATA SHEET
BAT960
Schottky barrier diode
DISCRETE SEMICONDUCTORS
M3D744
2003 May 01

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BAT960,115 Summary of contents

Page 1

DATA SHEET BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 DISCRETE SEMICONDUCTORS M3D744 2003 May 01 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • High current capability • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Ultra high-speed switching • rectification • DC/DC conversion • Switch mode power supply • ...

Page 3

... NXP Semiconductors Schottky barrier diode THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board Soldering The only recommended soldering method is reflow soldering. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V continuous forward voltage ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 80 handbook, halfpage C d (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 May scale 1.3 1.7 0.3 1.0 0.5 1.1 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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