PMEG6030EP,115 NXP Semiconductors, PMEG6030EP,115 Datasheet

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PMEG6030EP,115

Manufacturer Part Number
PMEG6030EP,115
Description
DIODE SCHOTTKY 60V 3A SOD128
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG6030EP,115

Package / Case
SOD-128 Flat Leads
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
200µA @ 60V
Voltage - Forward (vf) (max) @ If
530mV @ 3A
Voltage - Dc Reverse (vr) (max)
60V
Capacitance @ Vr, F
360pF @ 1V, 1MHz
Current - Average Rectified (io)
3A
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
3 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.53 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061481115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG6030EP,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1.
T
[1]
Symbol
I
V
V
I
F(AV)
R
j
R
F
= 25
PMEG6030EP
3 A low V
Rev. 01 — 21 January 2010
Average forward current: I
Reverse voltage: V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
°
C unless otherwise specified.
Quick reference data
Parameter
average forward current
reverse voltage
forward voltage
reverse current
F
MEGA Schottky barrier rectifier
R
≤ 60 V
F(AV)
≤ 3 A
Conditions
square wave;
δ = 0.5;
f = 20 kHz
T
T
I
V
F
amb
sp
R
= 3 A
= 60 V
≤ 135 °C
≤ 50 °C
2
O
[1]
3
, standard footprint.
Min
-
-
-
-
-
Typ
-
-
-
460
80
Product data sheet
Max
3
3
60
530
200
Unit
A
A
V
mV
μA

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PMEG6030EP,115 Summary of contents

Page 1

PMEG6030EP 3 A low V Rev. 01 — 21 January 2010 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Type number PMEG6030EP 4. Marking Table 4. Type number PMEG6030EP 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol F(AV) I FSM P tot ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB °C prior to surge. [ [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0. −1 10 −3 − FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 ...

Page 5

... NXP Semiconductors 2 10 duty cycle = 1 Z 0.75 th(j-a) (K/W) 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0. −1 10 −3 − Ceramic PCB standard footprint 2 3 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. ° Symbol ...

Page 6

... NXP Semiconductors (A) (1) 1 (2) (3) (4) (5) −1 10 −2 10 −3 10 −4 10 0.0 0.1 0.2 0.3 0.4 = 150 °C ( 125 °C ( °C ( °C ( −40 °C ( Fig 4. Forward current as a function of forward voltage; typical values = 25 ° MHz; T amb Fig 6. Diode capacitance as a function of reverse voltage; typical values ...

Page 7

... NXP Semiconductors 2.0 P F(AV) (W) 1.6 (2) 1.2 (1) 0.8 0.4 0.0 0.0 1.0 2.0 = 150 ° (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ Fig 7. Average forward power dissipation as a function of average forward current; typical values 4.5 I F(AV) (A) 3.0 (1) (2) (3) 1.5 (4) 0 100 FR4 PCB, standard footprint = 150 ° ...

Page 8

... NXP Semiconductors 4.5 (1) I F(AV) (A) (2) 3.0 (3) (4) 1.5 0 100 Ceramic PCB standard footprint 150 ° (1) δ (2) δ kHz (3) δ kHz (4) δ kHz Fig 11. Average forward current as a function of ambient temperature; typical values PMEG6030EP_1 Product data sheet 006aab888 4.5 I F(AV) (A) 3.0 1 ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. Duty cycle definition The current ratings for the typical waveforms as shown in calculated according to the equations RMS 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications ...

Page 10

... NXP Semiconductors 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMEG6030EP [1] For further information and the availability of packing methods, see 11. Soldering 3.4 Fig 15. Reflow soldering footprint SOD128 PMEG6030EP_1 Product data sheet Packing methods ...

Page 11

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PMEG6030EP_1 20100120 PMEG6030EP_1 Product data sheet 3 A low V Data sheet status Change notice Product data sheet - Rev. 01 — 21 January 2010 PMEG6030EP MEGA Schottky barrier rectifier F Supersedes - © NXP B.V. 2010. All rights reserved. ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information ...

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