STPS140A STMicroelectronics, STPS140A Datasheet - Page 2

• Manufacturer Part Number: STPS140A
• Description: DIODE SCHOTTKY 40V 1A SMA
• Manufacturer: STMicroelectronics

Specifications of STPS140A

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 12µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 1A
• Rev Curr: 12uA
• Peak Non-repetitive Surge Current (max): 60A
• Forward Voltage: 0.55V
• Operating Temp Range: -65C to 150C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 60 A
• Forward Voltage Drop: 0.65 V @ 2 A
• Maximum Reverse Leakage Current: 12 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Current, Forward: 1 A
• Current, Reverse: 1 A
• Current, Surge: 60 A
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.43 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-2453-2

STPS140
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.4 x I
Figure 1: Average forward power dissipation
versus average forward current
Figure
derating versus pulse duration
2/7
0.7
0.6
0.5
0.4
0.3
0.2
0.0
0.001
0.1
Symbol
Symbol
0.01
0.1
R
V
0.0
1
0.01
I
P
th(j-l)
R
F
P
F(AV)
P
ARM
**
*
ARM p
(W)
(1µs)
(t )
3:
0.2
Junction to lead
Reverse leakage current
Forward voltage drop
0.1
* tp = 5 ms,
** tp = 380 µs,
δ = 0.05
Normalized
0.4
Parameter
δ = 0.1
1
δ
I
t (µs)
< 2%
δ
F(AV)
p
< 2%
0.6
δ = 0.2
(A)
avalanche
10
0.8
δ = 0.5
T
T
T
T
T
T
100
δ
Parameter
j
j
j
j
j
j
=tp/T
= 25°C
= 100°C
= 25°C
= 125°C
= 25°C
= 125°C
1.0
Tests conditions
T
δ = 1
power
tp
1000
1.2
V
I
I
F
F
R
= 1A
= 2A
F(AV)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
Figure
derating versus junction temperature
1.0
0.8
0.6
0.4
0.0
1.2
0.2
= V
1.2
0.8
0.6
0.4
0.2
1
0
25
I
0
F(AV)
P
RRM
+ 0.10 I
ARM
P
δ
ARM p
=tp/T
SMA
SMB
(A)
(25°C)
(t )
4:
T
25
F
2
50
(RMS)
Min.
tp
Normalized
50
75
0.25
0.43
0.53
Typ
T
SMA
R
S
amb
th(j-a)
(CU)
T (°C)
=1.5cm
j
=100°C/W
75
(°C)
Value
2
30
25
Max.
0.55
0.45
0.65
100
avalanche
0.6
12
SMB
R
S
2
th(j-a)
(CU)
100
=1.5cm
=80°C/W
R
2
th(j-a)
=R
125
th(j-I)
125
°C/W
Unit
Unit
mA
µA
V
power
150
150