STTH1R04U STMicroelectronics, STTH1R04U Datasheet - Page 4

DIODE ULT FAST 400V 1A SMB

STTH1R04U

Manufacturer Part Number
STTH1R04U
Description
DIODE ULT FAST 400V 1A SMB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1R04U

Voltage - Forward (vf) (max) @ If
1.5V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.5 V
Recovery Time
30 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH1R04U
Manufacturer:
ST
Quantity:
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Part Number:
STTH1R04U
Manufacturer:
ST
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Manufacturer:
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Part Number:
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Manufacturer:
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Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
70
65
60
55
50
45
40
35
30
25
20
15
10
10
5
0
1.E-02
1
10
1
Single pulse
S
cu
SMA
=1cm²
1.E-01
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Junction capacitance versus
reverse voltage applied (typical
values)
Reverse recovery time versus
dI
F
/dt (typical values)
10
1.E+00
dI
F
t
V
/dt(A/µs)
P
100
(s)
R
(V)
T
T
j
j
=25 °C
1.E+01
=125 °C
100
1.E+02
V
OSC
F=1MHz
T
V
=30mV
j
=25°C
I
R
F
=320 V
= 1 A
RMS
1.E+03
1000
1000
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
36
32
28
24
20
16
12
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
4
0
1.E-03
10
10
V
V
Single pulse
I
R
I
R
S
F
F
=320 V
= 1 A
=320 V
cu
= 1 A
SMB
=1cm²
1.E-02
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
Reverse recovery charges versus
dI
versus dI
F
/dt (typical values)
1.E-01
F
/dt (typical values)
1.E+00
100
100
T
T
T
T
j
j
=125 °C
=125 °C
j
j
=25 °C
=25 °C
t
P
(s)
1.E+01
dI
dI
F
F
1.E+02
/dt(A/µs)
/dt(A/µs)
STTH1R04
1.E+03
1000
1000

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