IDV04S60C Infineon Technologies, IDV04S60C Datasheet - Page 8

• Manufacturer Part Number: IDV04S60C
• Description: DIODE SCHOTTKY 600V 4A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV04S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 4A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 32A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2nd Generation thinQ!™ SiC Schottky Diode
IDV04S60C
Electrical characteristics diagrams
Table 11
Typ. C stored energy
E
=f(V
)
C
R
Final Data Sheet
8
Rev. 2.0, 2010-01-08