BYD17D,115 NXP Semiconductors, BYD17D,115 Datasheet - Page 4

DIODE AVAL GPP 1.5A 200V SOD87

BYD17D,115

Manufacturer Part Number
BYD17D,115
Description
DIODE AVAL GPP 1.5A 200V SOD87
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYD17D,115

Voltage - Forward (vf) (max) @ If
1.05V @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 200V
Diode Type
Avalanche
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
21pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
LLDL (SOD87)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1661-2
933812230115
BYD17D T/R
Philips Semiconductors
GRAPHICAL DATA
2001 Oct 26
handbook, halfpage
handbook, halfpage
General purpose
controlled avalanche rectifiers
a = 1.57; V
Fig.2
a = I
Fig.4
I F(AV)
(A)
F(RMS)
(W)
P
2.5
2.0
1.5
1.0
0.5
3
2
1
0
0
0
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
0
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
/I
R
F(AV)
= V
; V
RRMmax
40
R
= V
0.4
;
RRMmax
= 0.5.
80
; = 0.5.
0.8
a = 3
120
2.5
1.2
160
2
I F(AV) (A)
T tp ( C)
1.57
MBH394
MBH395
1.42
200
1.6
4
handbook, halfpage
a = 1.57; V
Device mounted as shown in Fig.9.
Fig.3
Solid line = V
Dotted line = V
Fig.5
( C)
I F(AV)
o
T j
(A)
200
150
100
50
1.0
0.8
0.6
0.4
0.2
0
0
0
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
Maximum permissible junction temperature
as a function of reverse voltage.
0
R
= V
R
.
RRM
RRMmax
; = 0.5.
D
40
; = 0.5.
400
G
80
J
120
BYD17 series
800
Product specification
K
V R , V
160
RRM
T amb ( C)
M
MGC736
MSC293
(V)
1200
200

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