BAT254,115 NXP Semiconductors, BAT254,115 Datasheet

DIODE SCHOTTKY 30V 200MA SOD110

BAT254,115

Manufacturer Part Number
BAT254,115
Description
DIODE SCHOTTKY 30V 200MA SOD110
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT254,115

Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-110
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3412-2
934039300115
BAT254 T/R
Product data sheet
Supersedes data of 1999 Apr 22
dbook, halfpage
DATA SHEET
BAT254
Schottky barrier diode
DISCRETE SEMICONDUCTORS
M3D154
2002 May 28

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BAT254,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BAT254 Schottky barrier diode Product data sheet Supersedes data of 1999 Apr 22 DISCRETE SEMICONDUCTORS M3D154 2002 May 28 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Low forward voltage • Guard ring protected • Very small ceramic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I reverse current R t reverse recovery time rr C diode capacitance d Note = 300 μs; δ = 0.02. 1. Pulse test THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Very small ceramic rectangular surface mounted package D cathode identifier 1 OUTLINE VERSION IEC SOD110 2002 May 0 scale REFERENCES JEDEC EIAJ 5 Product data sheet BAT254 DIMENSIONS (mm are the original dimensions) A UNIT D E max. 2.10 1.40 mm 1.6 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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