BY329-1200,127 NXP Semiconductors, BY329-1200,127 Datasheet - Page 2

DIODE RECT 1200V 8A TO-220AC

BY329-1200,127

Manufacturer Part Number
BY329-1200,127
Description
DIODE RECT 1200V 8A TO-220AC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BY329-1200,127

Voltage - Forward (vf) (max) @ If
1.85V @ 20A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
1mA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
135ns
Mounting Type
Through Hole
Package / Case
TO-220AC-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
933703410127
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1998
Rectifier diodes
fast, soft-recovery
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
V
I
j
SYMBOL PARAMETER
t
Q
dI
R
rr
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
F
th j-mb
th j-a
s
R
/dt
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
in free air.
CONDITIONS
I
V
CONDITIONS
I
I
I
F
F
F
F
R
= 20 A
= 1 A; V
= 2 A; V
= 2 A; -dI
= V
RWM
; T
R
R
2
F
> 30 V; -dI
> 30 V; -dI
/dt = 20 A/ s
j
= 125 ˚C
F
F
/dt = 50 A/ s
/dt = 20 A/ s
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
100
1.5
0.1
0.5
60
50
-
Product specification
BY329 series
MAX.
MAX.
MAX.
1.85
135
2.0
1.0
0.7
60
-
Rev 1.200
UNIT
UNIT
UNIT
A/ s
K/W
K/W
mA
ns
V
C

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