SMBYW02-200 STMicroelectronics, SMBYW02-200 Datasheet

DIODE FAST REC 200V 2A SMB

SMBYW02-200

Manufacturer Part Number
SMBYW02-200
Description
DIODE FAST REC 200V 2A SMB
Manufacturer
STMicroelectronics
Datasheet

Specifications of SMBYW02-200

Voltage - Forward (vf) (max) @ If
1.25V @ 6A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-2511-2

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Single chip rectifier suited for Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values)
October 1999 - Ed: 4C
TIMES
SUITED FOR SMPS
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
LOW FORWARD AND REVERSE RECOVERY
Symbol
I
V
F(RMS)
I
Tstg
I
F(AV)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FSM
RRM
Tj
Tj (max)
V
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Non repetitive surge peak forward current
Storage temperature range
Maximum operating junction temperature
150 °C
0.85 V
200 V
2 A
Parameter
sinusoidal
Tl=100 C
tp=10ms
(JEDEC DO-214AA)
= 0.5
SMBYW02-200
SMB
- 65 to + 150
Value
200
150
10
50
2
Unit
V
A
A
A
C
C
1/5

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SMBYW02-200 Summary of contents

Page 1

... RMS forward current I F(AV) Average forward current I Non repetitive surge peak forward current FSM Tstg Storage temperature range Tj Maximum operating junction temperature October 1999 - Ed 200 V 0.85 V 150 °C Parameter SMBYW02-200 SMB (JEDEC DO-214AA) Value Unit 200 10 Tl=100 0.5 tp=10ms 50 sinusoidal - 150 150 V A ...

Page 2

... SMBYW02-200 THERMAL RESISTANCE Symbol Rth (j-l) Junction to leads STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters V Reverse Leakage Current Forward Voltage Drop Pulse test : * tp = 380 s, < ms, < evaluate the conduction losses use the following equation : 0 0.075 x I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Test Conditions ...

Page 3

... IM t =0.5 o Tc= 0.1 o Tc= Tc=100 C 0.01 0.001 1 10 Fig. temperature ( =0.5). I F(av)(A) 2.5 2.0 1.5 1.0 0.5 0 SMBYW02-200 =tp/T P=0.5W P=1.5W P=2.5W Zth(j-c) (tp. ) Rth(j- Single pulse tp(s) 0.01 0.1 6: Average current versus Rth(j-a)=Rth(j-l) o Rth(j-a)=75 C/W 2 1cm Cu =0.5 T =tp/T Tamb ...

Page 4

... SMBYW02-200 Fig. 7: Capacitance versus reverse voltage applied. Fig. 9: Peak reverse current versus dI Fig. 11: Thermal resistance junction to ambient versus copper surface under each lead. Rth(j-a) 100 Printed circuit : epoxy (e=35µ Scu( 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 Fig ...

Page 5

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S. 2.3 1.52 Package Weight SMB 0.11g STMicroelectronics GROUP OF COMPANIES http://www.st.com SMBYW02-200 DIMENSIONS REF. Millimeters Min. Max. Min. A1 1.90 2.45 0.075 A2 0.05 0.20 ...

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