STTA112U STMicroelectronics, STTA112U Datasheet

DIODE ULTRA FAST 1200V 1A SMB

STTA112U

Manufacturer Part Number
STTA112U
Description
DIODE ULTRA FAST 1200V 1A SMB
Manufacturer
STMicroelectronics
Series
TURBOSWITCH™r
Datasheet

Specifications of STTA112U

Voltage - Forward (vf) (max) @ If
1.65V @ 1A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
115ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Other names
497-3237-2

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
freewheel mode operations.
ABSOLUTE RATINGS (limiting values)
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
SNUBBING OR CLAMPING, DEMAGNETIZATION
AND RECTIFICATION
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
SPECIFIC TO THE FOLLOWING OPERATIONS:
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
Symbol
I
V
F(RMS)
I
I
T
FRM
FSM
RRM
T
stg
j
V
TURBOSWITCH
t
rr
F
V
I
F(AV)
(max)
®
RRM
(typ)
Repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
1200V
65ns
1.5V
1A
ULTRA-FAST HIGH VOLTAGE DIODE
Parameter
tp = 5 s F = 5kHz square
tp = 10ms sinusoidal
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for the secondary of SMPS as high voltage
rectifier diodes.
SMB
STTA112U
- 65 to + 150
Value
1200
125
10
20
6
Unit
°C
°C
V
A
A
A
1/8

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STTA112U Summary of contents

Page 1

... ULTRA-FAST HIGH VOLTAGE DIODE 1A 1200V 65ns 1.5V They are particularly suitable in motor control circuitries primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes. Parameter 5kHz square tp = 10ms sinusoidal STTA112U SMB Value Unit 1200 150 ° ...

Page 2

... STTA112U THERMAL AND POWER DATA Symbol Parameter R Junction to lead thermal resistance th(j-I) P Conduction power dissipation 1 P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter V Forward voltage drop Reverse leakage current Threshold voltage to Rd Dynamic resistance Test pulses : * tp = 380 s, < < ...

Page 3

... RM 15.0 12.5 10.0 7.5 5.0 2.5 0 /dt (90% Fig. 6: Softness factor (tb/ta) versus dI F values). S factor 1.00 V =600V R Tj=125°C 0.80 0.60 0. STTA112U VFM(V) V =600V R I =2*I F F(av) Tj=125°C d /dt(A/µ 100 120 140 160 180 200 /dt (Typical <2*I F F(av) Tj=125°C d /dt(A/µ ...

Page 4

... STTA112U Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference Tj=125°C). 1.1 S factor 1.0 0 0.8 Tj(°C) 0 Fig. 9: Forward recovery time versus dI confidence). tfr(ns) 800 I =2*I F F(av) 700 600 V FR =1.1*V 500 400 300 d /dt(A/µs) IF 200 4/8 Fig. 8: Transient peak forward voltage versus dI /dt (90% confidence) ...

Page 5

... In such application (fig D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE SWITCHING LOSSES LOSSES in the diode in the diode DIODE: TURBOSWITCH T = tp/T STTA112U Watts SWITCHING LOSSES in the diode due to the diode IL LOAD 5/8 ...

Page 6

... STTA112U APPLICATION DATA (Cont’d) Fig SNUBBER DIODE. PWM 1/T = tp/T Fig RECTIFIER DIODE. Fig STATIC CHARACTERISTICS 6/8 Fig DEMAGNETIZING DIODE. Conduction losses : Reverse losses : F(AV (RMS ...

Page 7

... I RM trr = tb/ta Fig TURN-ON CHARACTERISTICS / 1. tfr Turn-on losses : (in the transistor, due to the diode Turn-off losses : Turn-off losses : with non negligible serial inductance RECTIFIER OPERATION P3’ P3, P3’ and P5 are suitable for power MOSFET and IGBT Fmax Turn-on losses : STTA112U ...

Page 8

... FOOTPRINT DIMENSIONS (in millimeters) 1.52 2.75 Ordering type Marking STTA112U T03 Epoxy meets UL94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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