STTA506D STMicroelectronics, STTA506D Datasheet

DIODE ULTRA FAST 600V 5A TO220AC

STTA506D

Manufacturer Part Number
STTA506D
Description
DIODE ULTRA FAST 600V 5A TO220AC
Manufacturer
STMicroelectronics
Series
TURBOSWITCH™r
Datasheet

Specifications of STTA506D

Voltage - Forward (vf) (max) @ If
1.75V @ 5A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
5A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-3239
497-3239-5
497-3239

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTA506D
Manufacturer:
INTERSIL
Quantity:
1 600
Part Number:
STTA506D
Manufacturer:
ST
Quantity:
30 000
Part Number:
STTA506D
Manufacturer:
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Quantity:
20 000
MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
ABSOLUTE RATINGS (limiting values)
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed : 3D
FREEWHEEL OR BOOSTER DIODE
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
Electrical insulation : 2000VDC
Capacitance < 12 pF
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : ISOWATT220AC
Symbol
I
V
V
F(RMS)
I
I
T
FRM
FSM
RRM
RSM
T
stg
j
V
t
TURBOSWITCH
F
rr
V
I
F(AV)
®
RRM
(max)
(typ)
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Maximum operating junction temperature
Storage temperature range
600V
20ns
1.5V
5A
ULTRA-FAST HIGH VOLTAGE DIODE
Parameter
TO-220AC
ISOWATT220AC
DPAK
tp=5 s F=5kHz square
tp=10 ms sinusoidal
and is particularly suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in TO-220AC, ISOWATT220AC
or in DPAK, these 600V devices are particularly
intended for use on 240V domestic mains.
K
STTA506D
TO-220AC
K
STTA506D/F/B
STTA506B
K
A
DPAK
NC
ISOWATT220AC
-65 to 150
A
Value
STTA506F
600
600
150
10
65
20
55
K
Unit
°C
°C
V
V
A
A
A
A
A
1/10

Related parts for STTA506D

STTA506D Summary of contents

Page 1

... Packaged either in TO-220AC, ISOWATT220AC or in DPAK, these 600V devices are particularly intended for use on 240V domestic mains. Parameter TO-220AC ISOWATT220AC DPAK tp=5 s F=5kHz square tp=10 ms sinusoidal STTA506D/F ISOWATT220AC STTA506F DPAK ...

Page 2

... STTA506D/F/B THERMAL AND POWER DATA Symbol Parameter R Junction to case th(j-c) P Conduction power dissipation • =0.5 F(AV) P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter V * Forward voltage drop Reverse leakage current R V Threshold voltage to rd Dynamic resistance Test pulse : * tp = 380 s, < ...

Page 3

... Fig. 6: Relative variation of dynamic parameters F versus junction temperature (reference Tj = 125°C). 1.5 o 1.4 1.3 IF<2xIF(av) VR=400V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 STTA506D/F/B MAXIMUM VALUES o Tj=125 C IFM( 90% CONFIDENCE Tj=125 C VR=400V IF=5A IF=10A dIF/dt( factor IRM Tj(oC 100 ...

Page 4

... STTA506D/F/B Fig. 7: Transient peak forward voltage versus dI /ft. F VFP( 90% CONFIDENCE Tj=125 C 13 IF=IF(av dIF/dt( Fig. 9: Relative cariation of thermal transient im- pedance junction to case versus pulse duration (TO-220AC and DPAK). 4/10 Fig. 8: Forward recovery time versus dI tfr(ns) 500 450 400 350 300 250 ...

Page 5

... TRANSISTOR 1/T The way of calculating the power losses is given below: (Fig.A) TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 SWITCHING REVERSE LOSSES LOSSES in the diode in the diode DIODE: TURBOSWITCH T = t/T STTA506D/F/B Watts SWITCHING LOSSES in the transistor due to the diode IL LOAD 5/10 ...

Page 6

... STTA506D/F/B APPLICATION DATA (Cont’d) Fig STATIC CHARACTERISTICS Fig TURN-OFF CHARACTERISTICS V TRANSISTOR / / trr = / / trr = tb/ta 6/10 Conduction losses : Reverse losses : Turn-on losses : (in the transistor, due to the diode Turn-off losses (in the diode) : DIODE P3 and P5 are suitable for power MOSFET and t IGBT RECTIFIER ...

Page 7

... APPLICATION DATA (Cont’d) Fig TURN-ON CHARACTERISTICS / 1. tfr I Fmax Turn-on losses : STTA506D/F Fmax fr 7/10 ...

Page 8

... STTA506D/F/B PACKAGE MECHANICAL DATA DPAK FOOTPRINT DIMENSIONS (in millimeters) 6.7 1.6 2.3 2.3 8/10 REF Cooling method : by conduction (C) 6.7 6.7 3 1.6 DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 ...

Page 9

... Cooling method : by conduction (C) Recommanded torque value : 0.55m.N Maximum torque value : 0.7m REF Diam STTA506D/F/B DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.40 2.75 0.094 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1 ...

Page 10

... Cooling method : by conduction (C) Recommanded torque value : 0.55m.N Maximum torque value : 0.7m.N Ordering type Marking STTA506D STTA506D STTA506F STTA506F STTA506B STTA506B STTA506B-TR STTA506B Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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