1N5817RL STMicroelectronics, 1N5817RL Datasheet
1N5817RL
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1N5817RL Summary of contents
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LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I F(AV) V RRM (max) F FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE ...
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THERMAL RESISTANCES Symbol R Junction to ambient th (j-a) R Junction to lead th (j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 ...
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Fig. 3: Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 0.01 0 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum ...
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Fig. 8-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818). IR(mA) 1E+1 Tj=125°C 1N5817 1E+0 Tj=100°C 1E-1 1E-2 Tj=25°C VR(V) 1E Fig. 9-1: Forward voltage drop versus forward current (typical values) (1N5817/1N5818). IFM(A) ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...