STGB20NB32LZ STMicroelectronics, STGB20NB32LZ Datasheet

IGBT N-CH CLAMP 2V 20A I2PAK

STGB20NB32LZ

Manufacturer Part Number
STGB20NB32LZ
Description
IGBT N-CH CLAMP 2V 20A I2PAK
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGB20NB32LZ

Voltage - Collector Emitter Breakdown (max)
375V
Vce(on) (max) @ Vge, Ic
2V @ 4.5V, 20A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Logic
Mounting Type
Through Hole
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
12V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
497-3522-5

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGB20NB32LZ
Manufacturer:
NXP
Quantity:
40 000
Part Number:
STGB20NB32LZ
Manufacturer:
ST
0
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ST
Quantity:
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Company:
Part Number:
STGB20NB32LZ
Quantity:
50 000
Part Number:
STGB20NB32LZ-1
Manufacturer:
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Part Number:
STGB20NB32LZ-1
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0
Part Number:
STGB20NB32LZT4
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
ORDERING INFORMATION
December 2003
STGB20NB32LZ
STGB20NB32LZ-1
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
ELECTRONIC IGNITION FOR AUTOMOTIVE
STGB20NB32LZT4
STGB20NB32LZ-1
TYPE
SALES TYPE
IGBTs, with outstanding
CLAMPED
CLAMPED
V
CES
INTERNALLY CLAMPED PowerMESH™ IGBT
N-CHANNEL CLAMPED 20A - D
V
< 2.0 V
< 2.0 V
CE(sat)
GB20NB32LZ
GB20NB32LZ
MARKING
20 A
20 A
I
C
PACKAGE
D
D
INTERNAL SCHEMATIC DIAGRAM
I
2
2
PAK
2
PAK
PAK
STGB20NB32LZ-1
1
STGB20NB32LZ
3
TAPE & REEL
2
PACKAGING
PAK/I
TUBE
I
2
PAK
1 2
2
PAK
3
1/11

Related parts for STGB20NB32LZ

STGB20NB32LZ Summary of contents

Page 1

... ESD protection. APPLICATIONS ELECTRONIC IGNITION FOR AUTOMOTIVE ORDERING INFORMATION SALES TYPE STGB20NB32LZT4 STGB20NB32LZ-1 December 2003 N-CHANNEL CLAMPED 20A - CE(sat) C < 2 < 2 MARKING PACKAGE GB20NB32LZ GB20NB32LZ STGB20NB32LZ STGB20NB32LZ-1 2 PAK PAK 2 I PAK INTERNAL SCHEMATIC DIAGRAM PACKAGING 2 TAPE & REEL D PAK 2 TUBE I ...

Page 2

... STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol V Collector-Emitter Voltage (V CES V Reverse Battery Protection ECR V Gate-Emitter Voltage GE I Collector Current (continuous Collector Current (continuous Collector Current (pulsed Eas Single Pulse Energy T P Total Dissipation at T tot Derating Factor E ESD (Human Body Model Storage Temperature ...

Page 3

... Turn-off Switching Loss off t Cross-Over Time Off Voltage Rise Time r off t Fall Time Off Voltage Delay Time d off E (**) Turn-off Switching Loss off (**)Losses Include Also the Tail (jedec Standardization) STGB20NB32LZ - STGB20NB32LZ °C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions = MHz 280 Test Conditions ...

Page 4

... STGB20NB32LZ - STGB20NB32LZ-1 Output Characteristics Normalized Gate Threshold Voltage vs Temp. Collector-Emitter On Voltage vs Temperature 4/11 Transfer Characteristics Transconductance Capacitance Variations ...

Page 5

... Gate Charge vs Gate-Emitter Voltage Break-Down Voltage vs Emitter Resistance Self Clamped Inductive Switching Energy vs Open Secondary Coil STGB20NB32LZ - STGB20NB32LZ-1 Normalized BreakDown Voltage vs Temperature B (Zener Gate-Emitter) vs Temperature VGEO dV/dt Gate-Emitter Resistance 5/11 ...

Page 6

... STGB20NB32LZ - STGB20NB32LZ-1 B Reverse Battery Voltage VEC Switching Off Safe Operating Area 6/11 Thermal Impedance ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times STGB20NB32LZ - STGB20NB32LZ-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/11 ...

Page 8

... STGB20NB32LZ - STGB20NB32LZ-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 8/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º inch MIN. TYP. ...

Page 9

... TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 STGB20NB32LZ - STGB20NB32LZ-1 2 PAK) MECHANICAL DATA inch MAX. MIN. TYP. 4.60 0.173 2.72 0.094 0.88 0.024 1.70 0.044 0.70 0.019 1.32 0.048 9.35 0.352 2.70 0.094 5.15 0.194 10.40 0.393 14 0 ...

Page 10

... STGB20NB32LZ - STGB20NB32LZ PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 ...

Page 11

... STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STGB20NB32LZ - STGB20NB32LZ-1 © http://www.st.com 11/11 ...

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