STGW40NC60WD STMicroelectronics, STGW40NC60WD Datasheet - Page 4

MOSFET N-CHAN 650V 40A TO-247

STGW40NC60WD

Manufacturer Part Number
STGW40NC60WD
Description
MOSFET N-CHAN 650V 40A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW40NC60WD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
70A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V/2.1 A
Maximum Gate Emitter Voltage
+/- 20 V
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5742

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGW40NC60WD
Manufacturer:
ST
Quantity:
12 500
Part Number:
STGW40NC60WD
Manufacturer:
ST
0
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
CASE
V
(BR)CES
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
CES
GES
Q
g
oes
ies
res
ge
gc
fs
g
=25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter cut-off
current (V
Gate-emitter cut-off
current (V
Forward transconductance
Static
Dynamic
Parameter
Parameter
GE
CE
GE
= 0)
= 0)
= 0)
V
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
C
GE
CE
CE
GE
GE
CE
GE
GE
GE
CE
= 1 mA
= 15 V, I
= 15 V, I
= V
= 25 V, f = 1 MHz, V
= 390 V, I
= 15 V
= 600 V
= 600 V, T
= ± 20 V
= 15 V
Test conditions
GE
Test conditions
, I
,
C
C
I
C
C
= 250µA
= 30 A, T
= 30 A
C
= 30 A
C
= 30 A,
=125 °C
C
=125 °C
GE
= 0
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
STGW40NC60WD
2900
298
126
59
16
46
2.1
1.9
20
±100
5.75
500
2.5
5
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S

Related parts for STGW40NC60WD