STGB6NC60HDT4 STMicroelectronics, STGB6NC60HDT4 Datasheet - Page 6

• Manufacturer Part Number: STGB6NC60HDT4
• Description: IGBT N-CH 600V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB6NC60HDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 3A
• Current - Collector (ic) (max): 15A
• Power - Max: 56W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5110-2

Electrical characteristics
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Table 7.
Symbol
I
I
Q
Q
rrm
rrm
V
t
t
rr
rr
rr
rr
f
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
I
I
I
Tj = 25°C, di/dt = 100 A/µs
(see Figure 20)
I
Tj =125°C, di/dt = 100A/µs
(see Figure 20)
f
f
f
f
= 1.5A
= 1.5A, Tj = 125°C
= 3A ,V
= 3A ,V
Test conditions
R
R
= 40V,
= 40V,
Min.
Typ.
1.36
1.88
1.6
1.3
21
14
34
32
Max.
2.1
Unit
nC
nC
ns
ns
V
V
A
A