SKW15N60 Infineon Technologies, SKW15N60 Datasheet

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SKW15N60

Manufacturer Part Number
SKW15N60
Description
IGBT NPT 600V 31A 139W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKW15N60

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKW15N60XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKW15N60
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKW15N60
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Type
SKP15N60
SKB15N60
SKW15N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
1)
C
C
C
C
C
CE
GE
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Very soft, fast recovery anti-parallel EmCon diode
Complete product spectrum and PSpice Models :
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
CC
j
off
compared to previous generation
150 C
600V, T
600V
V
p
CE
limited by T
j
p
limited by T
1)
150 C
15A
I
C
jmax
jmax
V
2.3V
CE(sat)
SKP15N60,
150 C
http://www.infineon.com/igbt/
T
1
j
P-TO-220-3-1
(TO-220AB)
Package
TO-220AB
TO-263AB
TO-247AC
Symbol
V
I
I
-
I
I
V
t
P
T
C
C p u l s
F
F p u l s
S C
j
C E
G E
t o t
, T
s t g
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
G
-55...+150
SKW15N60
Ordering Code
Q67040-S4251
Q67040-S4252
Q67040-S4243
SKB15N60
Value
600
139
C
E
31
15
62
62
31
15
62
10
20
P-TO-247-3-1
(TO-247AC)
Unit
V
A
V
W
C
s
Jul-02

Related parts for SKW15N60

SKW15N60 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. SKP15N60, P-TO-220-3-1 (TO-220AB) http://www.infineon.com/igbt Package CE(sat) j 2.3V TO-220AB 150 C TO-263AB TO-247AC Symbol jmax SKB15N60 SKW15N60 P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) Ordering Code Q67040-S4251 Q67040-S4252 Q67040-S4243 Value Unit 600 139 W -55...+150 C Jul-02 ...

Page 2

... Conditions TO-220AB TO-247AC R TO-263AB Symbol Conditions (one layer thick) copper area for 2 SKB15N60 SKW15N60 Max. Value Unit 0.9 K/W 1 Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.3 2.8 1.2 1.4 1.8 - 1.25 1. 2000 - - 100 800 960 101 - 150 - A Jul-02 ...

Page 3

... C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SKB15N60 SKW15N60 Value Unit min. typ. max 234 281 - 0.30 0. 0.27 0.35 - 0.57 0.71 - 279 - 254 - - 390 - 180 - A/ s Value Unit min. typ. max 261 313 - 54 ...

Page 4

... Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 25° C 50° CASE TEMPERATURE C Figure 4. Collector current as a function of case temperature (V 15V, T 150 SKB15N60 SKW15N60 200 s 1ms DC 100V 1000V - EMITTER VOLTAGE 150 C) j 75°C 100° C 125°C Jul-02 ...

Page 5

... T =+25° -55°C 40A +150° C 35A 30A 25A 20A 15A 10A GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 10V) CE SKP15N60, SKW15N60 50A 45A 40A 35A V =20V GE 30A 15V 13V 25A 11V 9V 20A 7V 5V 15A 10A COLLECTOR EMITTER VOLTAGE CE Figure 6. Typical output characteristics ...

Page 6

... Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50° C 0° JUNCTION TEMPERATURE j Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.4mA SKB15N60 SKW15N60 t d(off 400V, CE max. typ. min. 50° C 100°C 150° C Jul-02 ...

Page 7

... K/W 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 10µs 100µs 150° PULSE WIDTH p Figure 16. IGBT transient thermal impedance as a function of pulse width ( SKB15N60 SKW15N60 include losses off 400V 0.5321 0.04968 -3 0.2047 2.58*10 -4 0.1304 2.54*10 -4 0.0027 3.06*10 ...

Page 8

... GE 250A 200A 150A 100A 50A 0A 15V 10V 12V GATE GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V 150 SKB15N60 SKW15N60 C iss C oss C rss 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V EMITTER VOLTAGE Jul-02 ...

Page 9

... DIODE CURRENT SLOPE F Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V 125 Dynamic test circuit in Figure E) 9 SKB15N60 SKW15N60 I = 30A 15A 7.5A F 500A/ s 700A/ s 900A/ s 500A/ s 700A/ s 900A/ s Jul-02 ...

Page 10

... Figure 27. Diode transient thermal impedance as a function of pulse width ( SKP15N60, 2.0V 1.5V 1.0V 2.0V -40° C 0° JUNCTION TEMPERATURE j Figure 26. Typical diode forward voltage as a function of junction temperature , ( 7.83*10 -2 1.21*10 -3 1.36*10 -4 1.53*10 -5 2.50* SKB15N60 SKW15N60 I = 30A 15A F 40°C 80°C 120°C Jul-02 ...

Page 11

... SKP15N60, TO-220AB 2 TO-263AB (D Pak) 11 SKB15N60 SKW15N60 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4 ...

Page 12

... SKP15N60, TO-247AC 12 SKB15N60 SKW15N60 dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 ...

Page 13

... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKP15N60, SKB15N60 SKW15N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Jul-02 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKP15N60, SKB15N60 SKW15N60 14 Jul-02 ...

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