SKW15N60 Infineon Technologies, SKW15N60 Datasheet - Page 7

• Manufacturer Part Number: SKW15N60
• Description: IGBT NPT 600V 31A 139W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW15N60

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 31A
• Power - Max: 139W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 31 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 31.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKW15N60XK

1.8mJ
1.6mJ
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
GE
= 15A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
5A
T
j
I
G
,
on
on
C
JUNCTION TEMPERATURE
,
= 2 1 ,
and E
and E
COLLECTOR CURRENT
10A
50°C
G
j
CE
ts
= 21 ,
ts
= 150 C, V
include losses
include losses
15A
= 400V, V
20A
100°C
CE
GE
25A
= 400V,
= 0/+15V,
30A
150°C
E
E
E
E
E
E
on
off
off
ts
ts
on
35A
*
*
*
*
SKP15N60,
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
10
10
10
10
10
GE
-1
-2
-3
-4
0
K/W
K/W
K/W
K/W
K/W
0
= 0/+15V, I
p
1µs
/ T)
0.02
0.05
0.01
0.1
D=0.5
0.2
single pulse
*) E
due to diode recovery.
10µs
on
20
R
and E
C
G
t
p
,
= 15A,
,
j
GATE RESISTOR
100µs
= 150 C, V
PULSE WIDTH
ts
include losses
R
0.5321
0.2047
0.1304
0.0027
40
SKW15N60
R , ( 1 / W )
1
C
1ms
SKB15N60
1
=
1
CE
/ R
10ms 100ms
1
= 400V,
60
C
0.04968
2.58*10
2.54*10
3.06*10
2
=
, ( s ) =
2
/ R
R
2
-3
-4
-4
E
E
E
2
ts
off
on
80
*
Jul-02
*
1s