SKW20N60 Infineon Technologies, SKW20N60 Datasheet
SKW20N60
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SKW20N60 Summary of contents
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... T 150 Power dissipation Operating junction and storage temperature 1) Allowed number of short circuits: <1000; time between short circuits: >1s. http://www.infineon.com/igbt Package C CE(sat) j 2.4V TO-247AC 150 C Symbol jmax jmax SKW20N60 P-TO-247-3-1 (TO-247AC) Ordering Code Q67040-S4242 Value 600 179 -55...+150 Unit Jul-02 ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions TO-247AC Symbol Conditions SKW20N60 Max. Value Unit 0.7 K/W 1.3 40 Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.4 2.9 1.2 1.4 1.8 - 1.25 1. 2500 - - 100 1100 1320 pF - 107 128 - 100 130 200 - A Jul-02 ...
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... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SKW20N60 Value Unit min. typ. max 225 270 - 0.44 0. 0.33 0.43 - 0.77 0.96 - 300 - 270 - - 490 - 180 - A/ s Value Unit min. typ. max 250 300 - 0.67 0.81 ...
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... V , COLLECTOR CE Figure 2. Safe operating area ( 50A 40A 30A 20A 10A 0A 125°C 25°C 50° Figure 4. Collector current as a function of case temperature (V 15V SKW20N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 75°C 100°C 125°C , CASE TEMPERATURE 150 C) j Jul-02 ...
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... COLLECTOR CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKW20N60 EMITTER VOLTAGE I = 40A 20A C 0°C 50°C 100°C 150°C Jul-02 ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.7mA SKW20N60 t d(off d(on GATE RESISTOR G = 150 400V 20A, C max. typ. ...
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... D=0.5 0 0.1 10 K/W 0. 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKW20N60 and E include losses off GATE RESISTOR G = 150 400V 20A 0.1882 0.1137 -2 0.3214 2.24*10 -4 0.1512 7 ...
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... GE 350A 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKW20N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE EMITTER VOLTAGE ...
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... Dynamic test circuit in Figure E) 1000A/ s 800A/ s 600A/ s 400A/ s 200A/ s 0A/ s 900A/ s 100A Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKW20N60 I = 40A 20A 10A F 300A/ s 500A/ s 700A/ s 900A DIODE CURRENT SLOPE F = 125 C, ...
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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.0V 1.5V 1.0V 1.5V 2.0V -40°C T Figure 26. Typical diode forward voltage as a function of junction temperature , ( 9.02*10 -3 9.42*10 -4 9.93*10 -4 1.19*10 -5 1.92* SKW20N60 I = 40A 20A F 0°C 40°C 80°C 120°C , JUNCTION TEMPERATURE j Jul-02 ...
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... TO-247AC 11 SKW20N60 dimensions symbol [mm] [inch] min max min A 4.78 5.28 0.1882 B 2.29 2.51 0.0902 C 1.78 2.29 0.0701 D 1.09 1.32 0.0429 E 1.73 2.06 0.0681 F 2.67 3.18 0.1051 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 K 15.65 16.15 0.6161 L 5.21 5.72 0.2051 M 19.81 20.68 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKW20N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =900pF. Jul-02 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKW20N60 13 Jul-02 ...