SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 9

IGBT NPT 600V 40A 179W TO247-3

SKW20N60

Manufacturer Part Number
SKW20N60
Description
IGBT NPT 600V 40A 179W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKW20N60

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
179W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
179W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Transistor Type
IGBT
Rohs Compliant
Yes
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
40.0 A
Ic(max) @ 100°
20.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
600ns
500ns
400ns
300ns
200ns
100ns
24A
20A
16A
12A
R
R
0ns
8A
4A
0A
= 200V, T
100A/ s
= 200V, T
100A/ s
d i
d i
F
F
/ d t,
/ d t,
I
300A/ s
300A/ s
F
j
j
= 20A
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 10A
I
500A/ s
500A/ s
F
= 10A
I
F
= 40A
700A/ s
700A/ s
I
F
= 40A
I
F
= 20A
900A/ s
900A/ s
9
1000A/ s
2500nC
2000nC
1500nC
1000nC
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
Dynamic test circuit in Figure E)
800A/ s
600A/ s
400A/ s
200A/ s
500nC
R
R
0A/ s
0nC
= 200V, T
= 200V, T
100A/ s
100A/ s
d i
di
F
F
/ d t,
/dt,
300A/ s
300A/ s
j
j
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 40A
500A/ s
500A/ s
SKW20N60
I
F
I
F
= 20A
= 10A
700A/ s
700A/ s
900A/ s
900A/ s
Jul-02

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