IHW20T120 Infineon Technologies, IHW20T120 Datasheet - Page 11

• Manufacturer Part Number: IHW20T120
• Description: IGBT 1200V 40A 178W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 178W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 178W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
25A
20A
15A
10A
20A
10A
5A
0A
0A
Figure 25. Typical reverse recovery current
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 27. Typical diode forward current as
a function of forward voltage
R
200A/µs
0V
=600V, I
di
F
/dt,
F
V
=8A,
400A/µs
F
,
DIODE CURRENT SLOPE
FORWARD VOLTAGE
1V
600A/µs
T
J
=25°C
150°C
2V
800A/µs
T
T
J
=150°C
J
=25°C
Soft Switching Series
11
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
2,0V
1,5V
1,0V
0,5V
0,0V
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
Dynamic test circuit in Figure E)
Figure 28. Typical diode forward voltage
as a function of junction temperature
-0A/µs
R
=600V, I
I
F
=15A
200A/µs
2,5A
-50°C
8A
5A
di
T
F
J
/dt,
,
F
=8A,
JUNCTION TEMPERATURE
DIODE CURRENT SLOPE
400A/µs
0°C
IHW20T120
600A/µs
50°C
Rev. 2.2 May 06
T
J
100°C
=25°C
800A/µs
T
J
=150°C