IKW25N120T2 Infineon Technologies, IKW25N120T2 Datasheet - Page 10

• Manufacturer Part Number: IKW25N120T2
• Description: IGBT 1200V 50A 349W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 349W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
600V
400V
200V
-1
-2
-3
0V
K/W
K/W
K/W
0us
V
I
10µs
C
CE
D=0.5
0.2
0.1
0.05
(V
Dynamic test circuit in Figure E)
(D = t
0.4us
GE
100µs
=0/15V, R
0.01
0.02
single pulse
t
p
P
,
/ T)
PULSE WIDTH
t,
1ms
0.8us
TIME
R
0.083
0.116
0.213
0.014
G
R , ( K / W )
1
=16.4Ω, T
C
1
=
10ms
1
/ R
1.2us
1
C
2.77*10
3.21*10
1.73*10
2.77*10
j
2
100ms
= 175 C,
=
, ( s )
2
/ R
TrenchStop
R
2
-4
-3
-2
-1
45A
30A
15A
0A
2
10
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
45A
30A
15A
0A
10
10
®
0us
-1
-2
V
2
K/W
K/W
I
C
CE
nd
10µs
generation Series
D=0.5
0.1
0.05
0.2
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
(D=t
0.4us
GE
P
=15/0V, R
100µs
/T)
t
P
,
IKW25N120T2
single pulse
PULSE WIDTH
0.01
0.02
t,
0.8us
TIME
1ms
G
=16.4Ω, T
R
0.198
0.301
0.287
0.019
R , ( K / W )
1
C
1
=
1.2us
10ms
1
Rev. 2.1
/ R
1
j
C
= 175 C,
3.31*10
3.33*10
1.68*10
2.49*10
2
=
100ms
, ( s )
2
/ R
600V
400V
200V
0V
Sep 08
R
2
-4
-3
-2
-1
2