IGW60T120 Infineon Technologies, IGW60T120 Datasheet - Page 5

• Manufacturer Part Number: IGW60T120
• Description: IGBT 1200V 100A 375W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW60T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 100A
• Power - Max: 375W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 375W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 60.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
125A
100A
125A
100A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
75A
50A
25A
75A
50A
25A
0A
0A
0V
0V
V
V
GE
CE
=17V
11V
V
15V
13V
2V
,
1V
(T
(V
9V
7V
GE
COLLECTOR
j
CE
= 25°C)
,
GATE-EMITTER VOLTAGE
=20V)
T
J
4V
2V
=150°C
25°C
-
6V
3V
EMITTER VOLTAGE
8V
4V
10V
5V
TrenchStop
12V
6V
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
®
125A
100A
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
75A
50A
25A
Series
0A
-50°C
0V
V
V
CE
GE
(T
saturation voltage as a function of
junction temperature
(V
=17V
,
T
11V
15V
13V
COLLECTOR
J
1V
j
GE
9V
,
7V
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
EMITTER VOLTAGE
IGW60T120
3V
50°C
4V
Rev. 2.4
5V
100°C
I
C
I
I
=100A
I
6V
Nov. 09
C
C
C
=30A
=15A
=60A