IRF7328TRPBF International Rectifier, IRF7328TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7328TRPBF
• Description: MOSFET 2P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7328TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2675pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 52 nC
• Package Type: SO-8
• Polarization: Dual P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 17 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 198 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 52 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7328PBFTR; IRF7328TRPBF; IRF7328TRPBFTR

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IRF7328PbF
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
I
DSS
2
fs
SD
GSS
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 400µs duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.0
––– -0.018 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2675 –––
–––
–––
-30
12
26.8
–––
ƒ
–––
–––
–––
–––
–––
––– -100
–––
198
409
262
9.8
8.3
37
36
17
52
13
15
98
Surface mounted on FR-4 board, ≤ 10sec
-1.2
-2.5
–––
–––
100
–––
–––
297
147
–––
–––
-32
-15
-25
56
54
21
32
78
20
23
2.0
V/°C
nC
mΩ
nC
ns
pF
V
V
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15Ω
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
‚
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.0A, V
= -2.0A
D
GS
GS
GS
= -250µA
= -8.0A
= -8.0A
= -6.8A
‚
= 0V
= 0V, T
= -10.0V
D
www.irf.com
= -1mA
‚
GS
‚
J
G
= 70°C
= 0V
‚
S
D