IRF7328TRPBF International Rectifier, IRF7328TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7328TRPBF
• Description: MOSFET 2P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7328TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2675pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 52 nC
• Package Type: SO-8
• Polarization: Dual P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 17 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 198 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 52 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7328PBFTR; IRF7328TRPBF; IRF7328TRPBFTR

www.irf.com
100
100
0.1
0.1
10
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
2.0
0.1
T = 150 C
J
-V
GS
-V DS , Drain-to-Source Voltage (V)
3.0
°
, Gate-to-Source Voltage (V)
T = 25 C
J
1
°
-2.7V
20µs PULSE WIDTH
Tj = 25°C
4.0
V
20µs PULSE WIDTH
DS
10
= -15V
5.0
TOP
BOTTOM -2.7V
VGS
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
6.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-8.0A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
IRF7328PbF
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.7V
10
TOP
BOTTOM -2.7V
V
GS
°
=
VGS
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
-10V
3
100